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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS41LV8200A-50J
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| OCR Text |
...cas access time (t cac )1415ns column address access time (t aa ) 25 30 ns edo page mode cycle time (t pc ) 20 25 ns read/write cycle time (t rc ) 85 104 ns product series overview part no. refresh voltage is41lv8200a 2k 3.3v 10% 1 2 3 4 ... |
| Description |
2M X 8 EDO DRAM, 50 ns, PDSO28
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| File Size |
126.75K /
20 Page |
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it Online |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS64M8AF-6K
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| OCR Text |
...lect the bank and the starting column locati on for the burst access. the ddr sdram provides for programmable read or write burst lengths of 2, 4, or 8 locations. an auto precharge func- tion may be enabled to provide a self-timed row pre... |
| Description |
64M X 8 DDR DRAM, 0.7 ns, PBGA60
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| File Size |
2,293.16K /
76 Page |
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it Online |
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FUJITSU LTD
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| Part No. |
MB81F161622C-70FN
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| OCR Text |
...open) 15 we write enable 16 cas column address strobe 17 ras row address strobe 18 cs chip select 19 a 11 (ba) bank select 20 ap auto precharge enable 20, 21, 22, 23, 24, 27, 28, 29, 30, 31, 32 a 0 to a 10 address input ?row: a 0 to a 1... |
| Description |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
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| File Size |
390.83K /
45 Page |
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it Online |
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| Part No. |
KMM366S824CT-GH
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| OCR Text |
...ograms latency (access from column address) burst length (1, 2, 4, 8 & full page) data scramble (sequential & interleave) ? all inputs are sampled at the positive going edge of the system clock ? serial presence det... |
| Description |
8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
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| File Size |
163.28K /
11 Page |
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it Online |
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PROMOS TECHNOLOGIES INC
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| Part No. |
V58C2512404SBI6I
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| OCR Text |
...lect ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba 0 , ba 1 bank select dq?s data input/output dm (udm, ldm) data mask v dd power (+2.5v and +2.6v f... |
| Description |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
924.79K /
61 Page |
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it Online |
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Mosel Vitelic
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| Part No. |
V54C365164VL
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| OCR Text |
...lled precharge command random column address every clk (1-n rule) suspend mode and power down mode auto refresh and self refresh refresh interval: 4096 cycles/64 ms available in 54 pin 400 mil tsop-ii lvttl interface single +3... |
| Description |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
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| File Size |
706.89K /
56 Page |
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it Online |
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| Part No. |
MT48LC16M32L2F5-10
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| OCR Text |
... internal pipelined operat ion; column address can be changed every clock cycle ? internal banks for hiding row access/precharge ? programmable burst lengths: 1, 2, 4, 8, or full page ? auto precharge, includes concurrent auto precharge,... |
| Description |
16M X 32 SYNCHRONOUS DRAM, PBGA90
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| File Size |
248.66K /
10 Page |
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it Online |
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PROMOS TECHNOLOGIES INC
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| Part No. |
V58C2256164SCE5BI
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| OCR Text |
...lect ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba0, ba1 bank select dq?s data input/output dm (udm, ldm) data mask v dd power (+2.5v and +2.6v for ... |
| Description |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
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| File Size |
915.14K /
61 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT4LDT464HX
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| OCR Text |
...e accessed by provid- ing valid column addresses, strobing cas# and hold- ing ras# low, thus executing faster memory cycles. returning ras# high terminates the fast-page- mode operation. edo page mode edo page mode, designated by the ?x? op... |
| Description |
SMALL-OUTLINE DRAM MODULE
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| File Size |
618.85K /
32 Page |
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it Online |
Download Datasheet |
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