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HYNIX SEMICONDUCTOR INC
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| Part No. |
HMT41GV7BMR4C-H9
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| OCR Text |
...ess a0-a14 a0-a14 a0-a14 a0-a14 column address a0-a9 a0-a9 a0-a9 a0-a9,a11 bank address ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 page size 1kb 1kb 1kb 1kb
rev. 0.1 / feb. 2010 5 pin descriptions pin name description num ber pin name description ... |
| Description |
DDR DRAM MODULE, DMA240
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| File Size |
1,060.21K /
61 Page |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HMT41GS6MFR8C-RD
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| OCR Text |
...thod 8k/64ms row address a0-a15 column address a0-a9 bank address ba0-ba2 page size 1kb
rev. 0.2 / aug. 2011 5 pin descriptions pin name description num ber pin name description num ber ck[1:0] clock input, positive line 2 dq[63:0] da... |
| Description |
DDR DRAM MODULE, DMA204
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| File Size |
345.31K /
48 Page |
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it Online |
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Winbond Electronics
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| Part No. |
W91590AL W91590L
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| OCR Text |
...-pin 24-pin 28-pin i/o function column- row inputs 1 - 7 & 18 - 22 1 - 7 & 20 - 24 1 - 8 & 24 - 28 i the keyboard input may be from either the standard 9 5 keyboard or an inexpensive single contact (form a) keyboard. electronic input f... |
| Description |
24-MEMORY TONE/PULSE SWITCHABLE DIALER WITH HANDFREE, HOLD AND LOCK FUNCTIONS
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| File Size |
222.29K /
20 Page |
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it Online |
Download Datasheet |
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QUICKLOGIC CORP
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| Part No. |
QL3004E-0PL84C
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| OCR Text |
...tion delays (ns) loads per half column a a. the array distributed networks consist of 24 half columns and the global distributed networks consist of 28 half columns, each driven by an independent buffer. the number of half columns used... |
| Description |
FPGA, 96 CLBS, 4000 GATES, PQCC84
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| File Size |
131.64K /
17 Page |
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it Online |
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Nanya Techology
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| Part No. |
NT5DS32M8BF NT5DS64M4BT
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| OCR Text |
...lect the bank and the starting column location for the burst access. the ddr sdram provides for programmable read or write burst lengths of 2, 4, or 8 locations. an auto precharge func- tion may be enabled to provide a self-timed row prec... |
| Description |
(NT5DSxxMxBx) 256Mb DDR SDRAM
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| File Size |
1,953.01K /
80 Page |
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it Online |
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Fujitsu Media Devices
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| Part No. |
MB84VD2229XEE MB84VD2229XEA MB84VD2228XEA
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| OCR Text |
...tions except for indicated this column are inhibited. 2. we can be v il if oe is v il , oe at v ih initiates the write operations. 3. do not apply ce f = v il , ce1 s = v il and ce2s = v ih at a time. 4. it is also used for the exte... |
| Description |
(MB84VD2228xEA/EE / MB84VD2229xEA/EE) 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM
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| File Size |
373.52K /
63 Page |
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Nanya
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| Part No. |
M2N2G64TU8HG4B M2N1G64TUH8G5F
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| OCR Text |
...ferential data strobes ??? column address strobe dm0 - dm7 input data masks ?? write enable v dd power ( 1.8 v) ??? , ??? chip selects v ref ref. voltage for sstl_18 inputs a0 - a9 a11 - a1 3 row address input... |
| Description |
Unbuffered DDR2 SO-DIMM
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| File Size |
366.67K /
19 Page |
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it Online |
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| Part No. |
K4T51163QE-ZPD50
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| OCR Text |
...ress bus is used to convey row, column, and bank address information in a ras / cas multiplexing style. the 512mb ddr2 device operates with a single 1.8v 0.1v power supply and 1.8v 0.1v vddq. the 512mb ddr2 device is available in 84bal... |
| Description |
32M X 16 DDR DRAM, 0.5 ns, PBGA84
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| File Size |
449.51K /
25 Page |
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it Online |
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Price and Availability
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