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    PROMOS TECHNOLOGIES INC
Part No. V59C1512804QBF37
OCR Text ...~ a 13 a 0 ~ a 13 a 0 ~ a 12 column address a 0 ~ a 9, a 11 a 0 ~ a 9 a 0 ~ a 9 ddr part number 3 promos technologies v59c1512(404/804/164)qb v59c1512(404/804/164)qb rev. 1.3 november 2006 x4 pack age pinout (top view) : 60ball f...
Description 64M X 8 DDR DRAM, 0.5 ns, PBGA60

File Size 1,189.75K  /  76 Page

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    IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S161

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text ...esh cycles every 64 ms * Random column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge command * Byte co...
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 750.59K  /  79 Page

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    IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL

ETC[ETC]
Part No. IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text ...esh cycles every 64 ms * Random column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write operations capability * Burst termination by burst stop and precharge command * Byte controlled by LDQM and UDQM * ...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 466.90K  /  55 Page

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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text ...esh cycles every 64 ms * Random column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge command * Industr...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200

ISSI[Integrated Silicon Solution, Inc]
ETC
Part No. IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text ...esh cycles every 64 ms * Random column address every clock cycle * Programmable CAS latency (2, 3 clocks) * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge command * Industr...
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 953.57K  /  55 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...valid block has 00h data at the column address of 517. 4. Added a new card-type package : K9S5608U0M-MCB0 1. Changed Endurance : 1million -> 100K Program/Erase Cycles 1. Changed package name : K9S5608U0M-MCB0 ->K9F5608U0M-MCB0(Micro Flash C...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ... A6 A15 A23 I/O 7 A7 A16 A24 column Address Row Address (Page Address) NOTE : column Address : Starting Address of the Register. 00h Command(Read) : Defines the starting address of the 1st half of the register. 01h Command(Read) : Def...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    HY5R256HCXXX HY5R256HC745

Hynix Semiconductor
Part No. HY5R256HCXXX HY5R256HC745
OCR Text ... buses with independent row and column control yield over 95% bus efficiency. the direct rdram's 32 banks support up to four simultaneous transactions. system oriented features for mobile, graphics and large memory systems include powe...
Description RDRAM

File Size 2,710.80K  /  64 Page

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    HMT451V7AFR8C

Hynix Semiconductor
Part No. HMT451V7AFR8C
OCR Text ...a15 a0-a15 a0-a15 a0-a15 a0-a15 column address a0-a9 a0-a9, a11 a0-a9 a0-a9, a11 a0-a9 bank address ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 page size 1kb 1kb 1kb 1kb 1kb free datasheet http:/// rev. 1.0 / may. 2013 5 pin descriptions pi...
Description DDR3 SDRAM VLP

File Size 1,218.01K  /  68 Page

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