PART |
Description |
Maker |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.
|
General Electric Solid State
|
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
BUK108-50GS |
PowerMOS transistor TOPFET PowerMOS transistor TOPFET(功率MOS晶体管TOPFET)
|
NXP Semiconductors Philips
|
BUK483-60A |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PHP33N10 |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PHP5N40 |
PowerMOS transistor
|
NXP Semiconductors Philips Semiconductors
|
BUK453-100 BUK453-100A BUK453-100B |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PHP18N20E |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUK466-100A |
PowerMOS transistor
|
NXP Semiconductors Philips Semiconductors
|
BUK465-60H |
PowerMOS transistor
|
NXP Semiconductors Philips Semiconductors
|
BUK464-200A |
PowerMOS transistor
|
NXP Semiconductors Philips Semiconductors
|