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  drain-source Datasheet PDF File

For drain-source Found Datasheets File :: 68186    Search Time::1.328ms    
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    2SD620 2SK620

PANASONIC[Panasonic Semiconductor]
Part No. 2SD620 2SK620
OCR Text ...m Ratings (Ta = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 10...
Description Silicon N-Channel MOS FET

File Size 35.23K  /  2 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ...nless otherwise specified Item drain-source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range S...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    71061 SI4831DY

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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 71061 SI4831DY
OCR Text ...SS OTHERWISE NOTED) Parameter drain-source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET ...
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode

File Size 67.11K  /  6 Page

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    SSM6N48FU

Toshiba Semiconductor
Part No. SSM6N48FU
OCR Text ...acteristics symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 100 drain current pulse i dp 400 ma power dissipation p d (note 1) 300 mw channel temperature t ch 150 c storage tem...
Description Load Switching Applications

File Size 171.07K  /  5 Page

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    TOSHIBA
Part No. SSM6N40TU
OCR Text ...racteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 1.6 drain current pulse i dp 3.2 a drain power dissipation p d (note1) 500 mw channel temperature t ch 150 c st...
Description Small-signal MOSFET 2 in 1

File Size 219.12K  /  7 Page

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    SSF1122

Silikron Semiconductor Co.,LTD.
Silikron Semiconductor Co.,...
Part No. SSF1122
OCR Text ... i d @t c =25 ? c continuous drain current,vgs@10v 60 a i d @t c =100 ? c continuous drain current,vgs@10v 50 i dm pulsed drain c...source voltage 20 v e as single pulse avalanche energy 240 mj e ar repetitive avalanch...
Description Advanced trench process technology

File Size 418.17K  /  5 Page

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    SSF1122D

Silikron Semiconductor Co.,LTD.
Silikron Semiconductor Co.,...
Part No. SSF1122D
OCR Text ... i d @t c =25 ? c continuous drain current,vgs@10v 60 a i d @t c =100 ? c continuous drain current,vgs@10v 50 i dm pulsed drain c...source voltage 20 v e as single pulse avalanche energy 240 mj e ar repetitive avalanch...
Description SSF1122D
Advanced trench process technology

File Size 389.20K  /  5 Page

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    NVD4815N

ON Semiconductor
Part No. NVD4815N
OCR Text ...ed) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 8.5 a t a = 85 c 6.5 power dissipation r ja (note 1) t ...
Description 30 V, 35 A, Single N?Channel, DPAK/IPAK

File Size 150.08K  /  8 Page

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    NVD4804N NVD4804NT4G NTD4804NT4G

ON Semiconductor
Part No. NVD4804N NVD4804NT4G NTD4804NT4G
OCR Text ...ed) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain current (r ja ) (note 1 ) steady state t a = 25 c i d 19.6 a t a = 85 c 15.2 power dissipation (r ja ) (note 1)...
Description Power MOSFET 30 V, 117 A, Single N?Channel, DPAK/IPAK

File Size 85.64K  /  8 Page

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    SamHop Microelectronics
Part No. SP3900
OCR Text ... t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v 4.5a 74 @ vgs=4.5v 42 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and relia...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 108.83K  /  7 Page

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