| PART |
Description |
Maker |
| GBJ30B GBJ30G |
Low forward voltage, high forward current
|
GeneSiC Semiconductor, ...
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 251UL80S20 251UL 251UL100S10 251UL100S15 251UL100S |
2000V Fast Recovery Diode in a DO-205AB (DO-9) package 2000V快恢复二极管中的DO - 205AB（请 9）封
1600V Fast Recovery Diode in a DO-205AB (DO-9) package 1600V快恢复二极管中的DO - 205AB（请 9）封
2500V Fast Recovery Diode in a DO-205AB (DO-9) package
1000V Fast Recovery Diode in a DO-205AB (DO-9) package
1200V Fast Recovery Diode in a DO-205AB (DO-9) package
1800V Fast Recovery Diode in a DO-205AB (DO-9) package
1400V Fast Recovery Diode in a DO-205AB (DO-9) package
250 AMP Fast Recovery Power Silicon Rectifiers
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 250安培快速恢复电力硅整流
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流
|
OlympicControls, Corp.
Cree, Inc.
IRF[International Rectifier]
http://
International Rectifier, Corp.
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| APT30GT60BRG APT30GT60BR08 |
Low Forward Voltage Drop
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
Microsemi Corporation
Advanced Power Technology
|
| BTA854W BAT854CW BAT854W BAT854AW BAT854SW |
Very low forward voltage Very low reverse current Guard ring protected
|
TY Semiconductor Co., Ltd
|
| CBD20200VFCT CBD20200VFCTT010001 CBD20200VFCTT0000 |
Ultra low forward voltage drop, low power losses
|
Pan Jit International Inc.
|
| SVM860V |
Ultra low forward voltage drop, low power losses
|
Pan Jit International Inc.
|
| SVM1560U |
Extreme low forward voltage drop, low power losses
|
Pan Jit International Inc.
|
| 1SS294 |
Small package Low forward voltage: VF(3) = 0.54 V(Typ).Low reverse current: IR = 5A(Max).
|
TY Semiconductor Co., Ltd
|
| VT60M45C-M3 VT60M45CHM3 |
Low forward voltage drop, low power losses
|
Vishay Siliconix
|
