Part Number Hot Search : 
PS9100GD NX9511B P100K FM4005 N1N2831 BGA2709 F60B2C SKY73009
Product Description
Full Text Search
  trench-based Datasheet PDF File

For trench-based Found Datasheets File :: 1887    Search Time::1.125ms    
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    FDMC7692

Fairchild Semiconductor
Part No. FDMC7692
OCR Text Trench(R) MOSFET July 2009 FDMC7692 N-Channel Power Trench(R) MOSFET 30 V, 13.3 A, 8.5 m: Features Max rDS(on) = 8.5 m: at VGS = ...based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH,...
Description N-Channel Power Trench? MOSFET 30 V, 13.3 A, 8.5 m
N-Channel Power Trench垄莽 MOSFET 30 V, 13.3 A, 8.5 m

File Size 253.41K  /  7 Page

View it Online

Download Datasheet





    FDMC7680

Fairchild Semiconductor
Part No. FDMC7680
OCR Text Trench(R) MOSFET July 2009 FDMC7680 N-Channel Power Trench(R) MOSFET 30 V, 14.8 A, 7.2 m: Features Max rDS(on) = 7.2 m: at VGS = ...based on starting TJ = 25 oC, L = 1 mH, IAS = 12 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, ...
Description N-Channel Power Trench垄莽 MOSFET 30 V, 14.8 A, 7.2 m
N-Channel Power Trench? MOSFET 30 V, 14.8 A, 7.2 m

File Size 203.30K  /  7 Page

View it Online

Download Datasheet

    CB55000 8590

ST Microelectronics
STMicroelectronics
Part No. CB55000 8590
OCR Text ...able vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. s 2.5 V optimized t...based design systems with interface from multiple workstations. Broad range of packaging solutions, ...
Description HCMOS7 STANDARD CELLS
From old datasheet system
HCMOS7 STANDARD CELLS

File Size 2,532.22K  /  15 Page

View it Online

Download Datasheet

    FDMC7672

Fairchild Semiconductor
Part No. FDMC7672
OCR Text Trench(R) MOSFET July 2009 FDMC7672 N-Channel Power Trench(R) MOSFET 30 V, 16.9 A, 5.7 m: Features Max rDS(on) = 5.7 m: at VGS = ...based on starting TJ = 25 oC, L = 1 mH, I AS = 17 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH,...
Description N-Channel Power Trench垄莽 MOSFET 30 V, 16.9 A, 5.7 m
N-Channel Power Trench? MOSFET 30 V, 16.9 A, 5.7 m

File Size 203.95K  /  7 Page

View it Online

Download Datasheet

    FDMC769210 FDMC7692

Fairchild Semiconductor
Part No. FDMC769210 FDMC7692
OCR Text Trench(R) MOSFET March 2010 FDMC7692 N-Channel Power Trench(R) MOSFET 30 V, 13.3 A, 8.5 m: Features Max rDS(on) = 8.5 m: at VGS =...based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V. (c)2010 Fairchild S...
Description N-Channel Power Trench垄莽 MOSFET
N-Channel Power Trench庐 MOSFET
N-Channel Power Trench? MOSFET

File Size 207.89K  /  7 Page

View it Online

Download Datasheet

    IRGS4055PBF IRGB4055PBF

International Rectifier
Part No. IRGS4055PBF IRGB4055PBF
OCR Text TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low V...based on maximum allowable junction temperature. Package limitation current is 70A. 2 www.irf....
Description PDP TRENCH 1GBT

File Size 698.65K  /  10 Page

View it Online

Download Datasheet

    FDMS267212

Fairchild Semiconductor
Part No. FDMS267212
OCR Text trench mosfet ?2012 fairchild semiconductor corporation fdms26 72 rev.c 1 www.fairchildsemi.com 1 fdms2672 ...based on starting t j = 25 c, l = 3mh, i as = 4.75a, v dd = 25v, v gs = 10v. fdms2672 n-chan...
Description N-Channel UltraFET Trench MOSFET 200V, 20A, 77m

File Size 311.32K  /  7 Page

View it Online

Download Datasheet

    FDMC7692S

Fairchild Semiconductor
Part No. FDMC7692S
OCR Text trench ? syncfet tm ?2009 fairchild semiconductor corporation fdmc7692s rev.c1 www.fairchildsemi.com 1 december 2009 fdmc7692s n-channel pow...based on starting t j = 25 c, l = 0.3 mh, i as = 12.0 a, v dd = 27 v, v gs = 10 v. 100% test a...
Description N-Channel Power Trench? SyncFETTM

File Size 210.83K  /  8 Page

View it Online

Download Datasheet

    FDD6760A

Fairchild Semiconductor
Part No. FDD6760A
OCR Text Trench(R) MOSFET January 2009 FDD6760A N-Channel PowerTrench(R) MOSFET 25 V, 3.2 m Features Max rDS(on) = 3.2 m at VGS = 10 V, ID =...based on starting TJ = 25 C, L = 1 mH, IAS = 12 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, ...
Description N-Channel PowerTrench垄莽 MOSFET 25 V, 3.2 m楼?

File Size 311.98K  /  6 Page

View it Online

Download Datasheet

    FDMC7672

Fairchild Semiconductor
Part No. FDMC7672
OCR Text trench ? mosfet fdmc7672 n-channel power trench ? mosfet 30 v, 16.9 a, 5.7 m features max r ds(on) = 5.7 m at v gs = 10 v, i d =...based on starting t j = 25 o c, l = 1 mh, i as = 17 a, v dd = 27 v, v gs = 10 v. 100% test at l...
Description N-Channel MOSFET

File Size 238.42K  /  7 Page

View it Online

Download Datasheet

For trench-based Found Datasheets File :: 1887    Search Time::1.125ms    
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of trench-based

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.52707815170288