PART |
Description |
Maker |
SFH426 SFH421 Q62703-P0331 Q62702-P1055 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode,在SMT Geh锓包GaAlA红外发射 GaAlAs-IR-Lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
SFH4289 |
GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode,盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头
|
Electronic Theatre Controls, Inc. ETC OSRAM GmbH
|
Q65110A2741 SFH722112 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
OSRAM GmbH
|
XDMR14C4 |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 23990
|
SunLED Company Limited
|
XDMR14C2 |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 23990
|
SunLED Company Limited
|
XDMR06C |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 12000 Iv(ucd) If@10mA Typ.= 20795
|
SunLED Company Limited
|
Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器,红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm From old datasheet system
|
红外LED SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
126244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
125244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
127141 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
128244 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
127141N |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|