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Osram Opto Semiconductors
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| Part No. |
F1047A
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| OCR Text |
gaalas-infrarot-lumineszenzdiode (880 nm) gaalas infrared emitting diode (880 nm) vorl?ufige daten / preliminary data 2003-04-11 1 wesentliche merkmale ? typ. gesamtleistung: 22 mw @ 100 ma im topled ? geh ? use chipgr ?? e 300 x 300 ... |
| Description |
Infrared Emitting Diode Chip
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| File Size |
100.32K /
6 Page |
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it Online |
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Infineon
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| Part No. |
SFH4391
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| OCR Text |
GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
Vorlaufige Daten / Preliminary Data
SFH 4391
Area not flat 0.6 0.4 5.2 4.5 4.1 3.9
2.54 mm spacing
4.0 3.6
0.7 0.4 0.8 0.4
1.8 1.2 Anode
(3.5) 29 27 6.3 5.9... |
| Description |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
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| File Size |
40.08K /
5 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-P5053 SFH4860
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| OCR Text |
gaalas-lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm)
SFH 4860
Chip position
2.54 mm spacing
o0.45
14.5 12.5
o4.8 o4.6
Cathode
4.05 3.45
GMO06983
Mae in mm, wenn nicht anders angegeben/Dimension... |
| Description |
gaalas-lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
From old datasheet system
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| File Size |
41.01K /
5 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH4590 SFH4595
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| OCR Text |
GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
SFH 4590 SFH 4595
2.7 2.3
2.05 R 1.95
2.7 2.4
Chip position 4.5 7.5 3.9 5.5
(3.2) (R 2.8) (3.2) 5.8 5.4
GEO06968
14.7 13.1
2.54 mm spacing
0...0.1
... |
| Description |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
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| File Size |
57.69K /
6 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH4591 SFH4592 Q62702-P5059 Q62702-P5060 SIEMENSAG-Q62702-P5059
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| OCR Text |
GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
SFH 4591 SFH 4592
Area not flat 0.6 0.4 9.0 8.2 7.8 7.5
2.54 mm spacing
0.8 0.4
5.9 5.5
o5.1 o4.8
Anode
1.8 1.2 29.5 27.5
Chip position
GEX06626
SF... |
| Description |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
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| File Size |
49.73K /
5 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH464E7800 SFH464 Q62702-Q1745
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| OCR Text |
gaalas-lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm)
SFH 464
o0.45
2.54 mm spacing
Chip position
o4.3 o4.1
1 0.9 .1 1.1 .9 0
2.7
1
14.5 12.5
3.6 3.0
o5.5 o5.2
GET06625
Anode (LD 242, BPX 63,... |
| Description |
gaalas-lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
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| File Size |
39.47K /
5 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH426 SFH421 Q62703-P0331 Q62702-P1055
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| OCR Text |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7
SFH 421 SFH 426
fpl06724
3.4 3.0
2.4
0.8 0.6 Cathode/Collector marking Approx. weight 0.03 g
1.1 0.5... |
| Description |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode，在SMT Geh锓包GaAlA红外发射
GaAlAs-IR-Lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package
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| File Size |
52.40K /
5 Page |
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it Online |
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