| PART |
Description |
Maker |
| AT27C256R-45JU |
256K (32K x 8) One-time Programmable, Read-only Memory
|
ATMEL Corporation
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| CY7C0851V |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K x 36同步双端口RAM)
|
Cypress Semiconductor Corp.
|
| IDT71256SA70 IDT71256SA70PZ IDT71256SA70T IDT71256 |
Asynchronous Communications Element With Autoflow Control 48-TQFP 0 to 70 32K X 8 STANDARD SRAM, 70 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT)
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| CY62256VLL-70ZI CY62256VLL-70ZRI CY62256V CY62256V |
32K x 8 Static RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????) 32K X 8 STANDARD SRAM, 70 ns, PDSO28
256K (32K x 8) Static RAM
|
Cypress Semiconductor, Corp.
SRAM
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
http://
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| M27256 M27256-F1 M27256-F6 M27256-4F6 M27256-1F1 M |
NND - NMOS 256 KBIT (32KB X8) UV EPROM
NMOS 256K 32K x 8 UV EPROM
32K X 8 UVPROM, 200 ns, CDIP28
32K X 8 UVPROM, 250 ns, CDIP28
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| AT29C257-70 AT29C257-15JC AT29C257-12JC AT29C257-9 |
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO -55 to 125
256K 32K x 8 5-volt Only CMOS Flash Memory 256K 32K的8 5伏只有闪存的CMOS
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 32K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Atmel Corp.
Atmel, Corp.
|
| 27LV256-20IL 27LV256-20IP 27LV256-20SO 27LV256 27L |
256K (32Kx8) low-voltage CMOS EPROM
256K (32K x 8) Low-Voltage CMOS EPROM 256K2K的8）低电压的CMOS存储
256K (32K x 8) Low-Voltage CMOS EPROM(3.0~5.5V,256K浣?CMOS EPROM)
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| HN27C256A HN27C256AFP-12T HN27C256AFP-15T HN27C256 |
256K(32K x 8-bit) UV and OTP EPROM
256K (32K x 8-bit) UV and OTP EPROM, 120ns
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| CY14B104K CY14B104K-ZS20XC CY14B104K-ZS20XCT CY14B |
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 44-TSOP-II; Features: Real-Time Clock
4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
|
