256k 32k x 8 one-time programm pdf Datasheet P1 Description --- IC-ON-LINE


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256k 32k x 8 one-time programm Datasheet PDF File

For 256k 32k x 8 one-time programm Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Macronix International Co., Ltd. MACRONIx INTERNATIONAL CO LTD
Part No.	Mx26C2000BQI-15 Mx26C2000BTC-10 Mx26C2000BTI-10 Mx26C2000BPC-10 Mx26C2000BMI-10 Mx26C2000BQI-10 Mx26C2000BPI-10 Mx26C2000BMC-10 Mx26C2000BQC-10 Mx26C2000BTI-15 Mx26C2000BPC-90 Mx26C2000BQI-90 Mx26C2000BTC-90 Mx26C2000BMC-15
Description	DIODE SCHOTTKY 15V 2x35A TO247AD SWITCH PB SPST-NO .4VA SOLDERLUG CONNECTOR ACCESSORY 2M-BIT [256k x 8] CMOS MULTIPLE-TIME-programmABLE-EPROM 256k x 8 FLASH 12V PROM, 90 ns, PDIP32 IC HALF BRIDGE DRVR HS 2A 16-DIP 256k x 8 FLASH 12V PROM, 90 ns, PQCC32 2M-BIT [256k x 8] CMOS MULTIPLE-TIME-programmABLE-EPROM 256k x 8 FLASH 12V PROM, 90 ns, PDSO32
File Size	990.46K / 23 Page	View it Online	Download Datasheet

				ETC Electronic Theatre Controls, Inc.
Part No.	GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036AT-166 GS84032AT-166I GS84018AT-166 GS84018AT-166I GS84036AT-100 GS84018AT-180 GS84018AT-180I GS84032AB-180I GS84036AB-180I GS84036AT-180I GS84018AB-100 GS84018AT-100 GS84018AT-100I GS84032AT-180 GS84032AT-180I GS84036AB-100I GS84018AB-166I GS84032AT-150I GS84036AB-166I
Description	256k x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器 256k x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
File Size	667.05K / 31 Page	View it Online	Download Datasheet

				Alliance Semiconductor
Part No.	AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B-70TI AS29F200T-70TC AS29F200T-70TI AS29F200B-55TC AS29F200B-55TI AS29F200T-55TC AS29F200T-55TI AS29F200B-90TI AS29F200T-90TI AS29F200B-90TC
Description	5V 256k x 8 / 128K x 16 CMOS Flash EEPROM 5V 256k x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256k x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256k x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256k x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
File Size	189.87K / 20 Page	View it Online	Download Datasheet

				Alliance Semiconductor Corporation ALSC
Part No.	AS4C256k16E0 AS4C256k16E0-30JC AS4C256k16E0-35JC AS4C256k16E0-50JC AS4C256k16E0-50TC AS4C256k16E0-35 AS4C256k16E0-50 AS4C256k16E0-30
Description	5V 256k x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256k x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256kx16 CMOS DRAM (EDO) 5V 256k?6 CMOS DRAM (EDO) x16EDOPageModeDRAM 5V256kxCMOSDRAM(EDO) 5V 256k x CMOS DRAM (EDO) 5V 256k x 16 CM0S DRAM (EDO), 30ns RAS access time
File Size	516.95K / 24 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description	256k x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256k x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256k x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256k x 16/18 bit x 32s banks Direct RDRAMTM 256k x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256k x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
File Size	304.91K / 20 Page	View it Online	Download Datasheet

				Alliance Semiconductor Corporation
Part No.	AS4C256k16F0-25JC AS4C256k16F0-25JI AS4C256k16F0-25TC AS4C256k16F0-25TI AS4C256k16F0-30JC AS4C256k16F0-30JI AS4C256k16F0-30TC AS4C256k16F0-30TI AS4C256k16F0-35JC AS4C256k16F0-35JI AS4C256k16F0-35TC AS4C256k16F0-35TI AS4C256k16F0-50JC AS4C256k16F0-50JI AS4C256k16F0-50TC AS4C256k16F0-50TI AS4C256k16FO-50JI AS4C256k16FO-50TI AS4C256k16FO AS4C256k16FO-50JC AS4C256k16FO-50TC
Description	5V 256k x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM 5V 256k x 16 CMOS DRAM (Fast Page Mode) 5V 256k x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256k x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256k x 16 CM0S DRAM (fast page mode), 25ns RAS access time
File Size	506.89K / 25 Page	View it Online	Download Datasheet

				Alliance Semiconductor
Part No.	AS4LC256k16E0-35JC AS4LC256k16E0-35TC AS4LC256k16E0-45JC AS4LC256k16E0-45TC AS4LC256k16E0-60JC AS4LC256k16E0-60TC
Description	3.3V 256k x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256k x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256k x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM
File Size	522.34K / 25 Page	View it Online	Download Datasheet

				AMIC Technology, Corp.
Part No.	A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8318SERIES A67L7332E-4 A67L7332E-4.2 A67L7332E-4.5 A67L8318E-4.2 A67L8316E-4.2 A67L7336E-4.2 A67L7336E-4 A67L7336E-4.5 A67L8316E-4 A67L8318E-4 A67L8318E-4.5
Description	Cycle time:7ns; access time:4.5ns; 256k x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 256k x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 256k x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM 256k x 16/18. 128K x 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的x 32/36 LVTTL等级。流水线数据库管理员的SRAM 256k x 16/18, 128K x 32/36 LVTTL, Pipelined DBA SRAM Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
File Size	384.78K / 19 Page	View it Online	Download Datasheet

				CYPRESS SEMICONDUCTOR CORP Cypress Semiconductor, Corp.
Part No.	CY14B104K CY14B104K-ZS20xC CY14B104K-ZS20xCT CY14B104K-ZS20xI CY14B104K-ZS20xIT CY14B104K-ZS25xC CY14B104K-ZS25xCT CY14B104K-ZS25xI CY14B104K-ZS25xIT CY14B104K-ZS45xC CY14B104K-ZS45xCT CY14B104K-ZS45xI CY14B104K-ZS45xIT CY14B104M CY14B104M-ZSP45xC CY14B104M-ZSP45xCT CY14B104M-ZSP45xI CY14B104M-ZSP45xIT CY14B104M-ZSP25xC CY14B104M-ZSP25xCT CY14B104M-ZSP25xI CY14B104M-ZSP25xIT CY14B104M-ZSP20xI CY14B104M-ZSP20xIT CY14B104M-ZSP20xCT
Description	Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 44-TSOP-II; Features: Real-Time Clock 4 Mbit (512K x 8/256k x 16) nvSRAM with Real Time Clock; Organization: 256kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256k x 16 NON-VOLATILE SRAM, 25 ns, PDSO54 4 Mbit (512K x 8/256k x 16) nvSRAM with Real Time Clock; Organization: 256kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256k x 16 NON-VOLATILE SRAM, 20 ns, PDSO54
File Size	678.10K / 33 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7
Description	256k x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256k x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256k x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256k x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
File Size	4,046.09K / 64 Page	View it Online	Download Datasheet

For 256k 32k x 8 one-time programm Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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