| PART |
Description |
Maker |
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| KI4953DY |
100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI1902DL |
Drain-source voltage Vds 20V Gate-source voltage Vgs -12V
|
TY Semiconductor Co., L...
|
| KI9926A |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., Ltd
|
| SI1302DL |
Drain-Source Voltage
|
TY Semiconductor Co., L...
|
| 2SK627 |
Drain Source Voltage-: VDSS= 50V(Min)
|
Inchange Semiconductor ...
|
| KSS138 |
N-Channel SOT-23 Drain-to-source voltage VDSS 50 V
|
TY Semiconductor Co., Ltd
|
| KI4501ADY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
|
TY Semiconductor Co., Ltd
|
| BUZ902DP BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
| KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
