| PART |
Description |
Maker |
| KI4562DY |
PIN Configuration Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI1400DL |
Drain-source voltage VDS 20 V Gate-source voltage VGS -12 V
|
TY Semiconductor Co., L...
|
| 5N20V |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., Ltd
|
| ADM3491 ADM3491AR ADM3491AN ADM3491ARU |
3.3 V/ Full Duplex/ 840 uA 20 Mbps/ EIA RS-485 Transceiver
3.3 V, Full Duplex, 840 uA 20 Mbps, EIA RS-485 Transceiver
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:90V; Continuous Drain Current, Id:0.86A; On-Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-205AD; Drain-Source Breakdown Voltage:90V RoHS Compliant: No
3.3V, Full Duplex, 840uA, 20Mbps, EIA RS-485 Transceiver
|
Analog Devices, Inc.
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| SI1303DL |
Drain-Source Voltage
|
TY Semiconductor Co., L...
|
| KI1304BDL |
TrenchFET Power MOSFET 100 Rg Tested Drain-source voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
| ST63P56 ST6356 ST6357 ST6327 ST6326 ST63PXX ST6306 |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.8A; On-Resistance, Rds(on):0.062ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-1206; Leaded Process Compatible:No 8位微控制器HCMOS背驮式电视应
(ST63Pxx) 8 Bit HCMOS Piggyback MCUs for TV Applications
8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
