| PART |
Description |
Maker |
| AS8FLC1M32BQT-90_IT AS8FLC1M32BQT-90_Q AS8FLC1M32B |
Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HIP-66
1M X 32 FLASH 3V PROM, 100 ns, CQFP68
|
http://
Austin Semiconductor, Inc
MICROSS COMPONENTS
|
| WED7PXXXATA80XXC25 WED7P032ATA8003C25 WED7P032ATA8 |
32MB to 4GB Flash Card
|
WEDC[White Electronic Designs Corporation]
|
| 32MB08F-02 |
(32MB08F-01/-02) 32MB Flash Memory Module
|
Hybrid Design Associates
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| DOM40S6R1.5G |
40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface
|
Hanbit Electronics Co.,Ltd.
|
| DOM44S6V1.5G DOM44S6V640 |
44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface
|
Hanbit Electronics Co.,Ltd.
|
| DS3832C-311 |
From old datasheet system
3.3V, 32Mb Advanced NV SRAM with Clock
3.3V/ 32Mb Advanced NV SRAM with Clock
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HFDOM-40LX HFDOM-40LX256 DOM40LX128 DOM40LX192 DOM |
40Pin Flash Disk Module for 128MB,192M, 256M, True IDE Interface Mode, 5.0V 40Pin28MB的闪存，192M，有256M的磁盘模块，真正的IDE接口模式.0V
|
Hanbit Electronics Co.,Ltd.
HANBIT[Hanbit Electronics Co.,Ltd]
HANBiT Electronics Co., Ltd.
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| WED3DG644V100D1I-MG WED3DG644V133D1I-SG |
32MB - 4Mx64 SDRAM, UNBUFFERED
|
White Electronic Designs Corporation
http://
|
| WED3DG644V100D1-S WED3DG644V100D1I-M WED3DG644VB10 |
32MB - 4Mx64 SDRAM, UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
