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utram Datasheet PDF File

For utram Found Datasheets File :: 44 Search Time::3.031ms
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					Samsung Semiconductor Co., Ltd. Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K1S321611C K1S321611C-FI70 K1S321611C-I
OCR Text	utram Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 13, 2003 - Corrected errorta '48-...
Description	2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器
File Size	178.12K / 10 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text	utram Revision History Revision No. History 0.0 Initial Draft Draft Date July 14, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change...
Description	2Mx16 bit Page Mode Uni-Transistor Random Access Memory
File Size	184.44K / 10 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K1S3216B1C K1S3216B1C-I
OCR Text	utram Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80uA to 100uA Draft Date January 16, 2003 June 9, 2003 Rem...
Description	2Mx16 bit Uni-Transistor Random Access Memory
File Size	179.11K / 10 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K1S64161CCNBSP K1S64161CC
OCR Text	utram Revision History Revision No. History 0.0 Initial Draft - Design Target Revised - Filled out ICC2 and ISB1 value ICC2(max) : 40mA ISB1(max,< 40C) : 120A ISB1(max,< 85C) : 180A - Changed tOH from min.5ns into min.3ns - Added tCSHP...
Description	4Mx16 bit Page Mode Uni-Transistor Random Access Memory
File Size	201.42K / 10 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K1S1616BCA
OCR Text	utram Revision History Revision No. History 0.0 Initial Draft Draft Date Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c...
Description	1Mx16 bit Page Mode Uni-Transistor Random Access Memory
File Size	185.48K / 10 Page	View it Online	Download Datasheet

					Samsung Electronic Samsung semiconductor
Part No.	K1S321615M K1S321615M-E K1S321615M-EE10
OCR Text	utram Revision History Revision No. History 0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA. - Change input and output reference voltage from 1.1V to 1.5V...
Description	2M x 16 bit Uni-Transistor CMOS RAM Data Sheet 2Mx16 bit Uni-Transistor Random Access Memory
File Size	237.70K / 12 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K1S3216BCD
OCR Text	utram Revision History Revision No. History 0.0 1.0 Initial Draft Finalize Draft Date Remark November 02, 2004 Preliminary Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics...
Description	2Mx16 bit Page Mode Uni-Transistor Random Access Memory
File Size	164.93K / 10 Page	View it Online	Download Datasheet

					Samsung semiconductor
Part No.	K1S6416BCC K1S6416BCC-I
OCR Text	utram Revision History Revision No. History 0.0 Initial Draft - Design Target Finalize Draft Date November 3, 2004 Remark Preliminary 1.0 April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electron...
Description	4Mx16 bit Page Mode Uni-Transistor Random Access Memory
File Size	133.21K / 10 Page	View it Online	Download Datasheet

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