| PART |
Description |
Maker |
| UPD444008 UPD444008LE-12 UPD444008LE-10 UPD444008L |
512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
|
NEC Corp.
|
| UPD434016A |
4M-Bit CMOS Fast SRAM / 256K-word by 16-Bit
|
NEC Electronics
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M5M5V5636UG-16 M5M5V5636GP-16I |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas
|
| M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system
|
Mitsubishi
|
| UPD444016LLE-A10 UPD444016LLE-A12 UPD444016LLE-A8 |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
| UPD4416008G5-A17-9JF UPD4416008G5-A15-9JF |
16M-bit(2M-word x 8-bit) Fast SRAM
|
NEC
|
| UPD444016G5-8Y-7JF UPD444016G5-10Y-7JF UPD444016G5 |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
| M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT |
Memory>Low Power SRAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| UPD444004LE-10 UPD444004LE-12 UPD444004LE-8 |
4M-bit(1M-word x 4-bit) Fast SRAM
|
NEC
|
| UPD444001LE-10 UPD444001LE-11 UPD444001LE-12 |
4M-bit(4M-word x 1-bit) Fast SRAM
|
NEC
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
