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				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	AM2729-110 2713
OCR Text	...W MIN. WITH 6.5 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2729-110 BRANDING 2729-110 PIN CONNECTION The AM272...gold metallization, and computerized automatic wire bonding techniques ensure high reliability and p...
Description	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS From old datasheet system
File Size	60.77K / 4 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	AM2729-125
OCR Text	...W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM2729-125 BRANDING 2729-125 The AM2729-125 device is a...gold metallization and computerized automatic wire bonding techniques ensure high reliability and pr...
Description	RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
File Size	108.68K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	AM2931-110
OCR Text	...W MIN. WITH 6.2 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931-110 DESCRIPTION The AM2931-1...gold metallization, and computerized automatic wire bonding techniques ensure high reliability and p...
Description	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
File Size	59.62K / 4 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG520W BFG520W_X BFG520W/X
OCR Text	X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 02 Philips Semiconductors Product spec...Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in...
Description	NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体 NPN 9 GHz wideband transistors
File Size	154.15K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text	X; BFG520/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semicon...Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transisto...
Description	NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	146.07K / 13 Page	View it Online	Download Datasheet

				Maxim Integrated Products
Part No.	MAX811TEUS
OCR Text	...c: I. Die Separation Method: 37 x 31 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Copper/Si None 1.2 microns (as drawn) 1.2 microns (as drawn) 5 mil. Sq. SiO2 Wafer Saw V. Quality Assurance Information A. Quality Assurance...
Description	PLASTIC ENCAPSULATED DEVICES
File Size	54.89K / 8 Page	View it Online	Download Datasheet

				OKI electronic components OKI electronic componets
Part No.	MSM6569 MSM5219B MSM6665-01 MSM6665B
OCR Text	...ts 48 56 80 On-Chip Oscillator X Drive Voltage (VLCD) 4.0 - 7.0 3.0 - 7.0 3.0 - 6.0 Package 60-lead PQFP 80-lead PQFP 100-lead PQFP Figure 1 below shows static driver connections to a single-digit, seven-segment alphanumeric display. S...
Description	Advanced LCD Controller/Driver Family
File Size	130.04K / 13 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC8178TB UPC8179 UPC8179TB UPC8179TB-E3 UPC8128TB UPC8151TB UPC8152TB UPC8179TB1 PC8179TB-E3
OCR Text	...pin super minimold package (2.0 x 1.25 x 0.9 mm) APPLICATION * Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution Electro-static sensitive devices The information in this document is subject to change without n...
Description	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	150.83K / 28 Page	View it Online	Download Datasheet

				NEC Corp. California Eastern Labs NEC[NEC]
Part No.	UPC8179TK UPC8179TK-E3
OCR Text	... Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) * SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V * HIGH EFFICIENCY: PO(1dB) = +2.0 dBm TYP at f = 1.0 G...gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ ...
Description	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	239.26K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BLV2045N
OCR Text	... BLV2045N DIMENSIONS 8 x 1 mm 2.5 x 3.5 mm 5.6 x 2.1 mm 2.0 x 7.4 mm 7.2 x 6.0 mm int. dia. = 3.3 mm; length = 6 mm 6.6 x 7.1 mm 6.4 x 12.6 mm 9.9 x 1.6 mm 2.7 x 5.4 mm int. dia. = 3.3 mm; length = 2.5 mm 3300 pF 11.5 6.9 35.8...
Description	UHF power transistor
File Size	75.44K / 12 Page	View it Online	Download Datasheet

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