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w 20a Datasheet PDF File

For w 20a Found Datasheets File :: 10149 Search Time::1ms
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				Wuxi NCE Power Semiconducto...
Part No.	NCE01H16
OCR Text	... power dissipation p d 370 w derating factor 2.5 w/ single pulse avalanche energy (note 5) e as 1400 mj wuxi nce po...20a - 3.8 5.0 m ? forward transconductance g fs v ds =5v,i d =20a 70 - - s dynamic char...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	326.01K / 7 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconducto...
Part No.	NCE01H13
OCR Text	... power dissipation p d 285 w derating factor 1.9 w/ single pulse avalanche energy (note 5) e as 1100 mj wuxi nce po...20a - 5.3 6.8 m ? forward transconductance g fs v ds =5v,i d =20a 40 - - s dynamic char...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	351.10K / 7 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	YG865C15R
OCR Text	... 1.75 unit v a c/w square wave, duty= 1/2 tc=101c rating 150 150 1500 20 150 +150 high v oltage schottky barrier diode ...20a) characteristics (150v / 20a ) 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1...
Description	High Voltage Schottky barrier diode
File Size	56.41K / 3 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	YG865C12R
OCR Text	... 1.75 unit v a c/w square wave, duty= 1/2 tc=116c rating 120 120 1500 20 150 +150 high v oltage schottky barrier diode ...20a) characteristics (120v / 20a ) 0.1 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tj=...
Description	High Voltage Schottky barrier diode
File Size	54.23K / 3 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGH20N60UFD13 FGH20N60UFDTU
OCR Text	...ion @ t c = 25 o c165 w maximum power dissipation @ t c = 100 o c66 w t j operating junction temperature -55 to +150 o c t stg...20a , v ge = 15v -1.82.4v i c = 20a , v ge = 15v, t c = 125 o c -2.0- v dynamic character...
Description	600 V, 20 A Field Stop IGBT
File Size	277.08K / 9 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DGT305SE18
OCR Text	... on(min) t off(min) s a/ s kw w a thermal ratings symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) -...20a, rise time < 1.0 s r l = (residual inductance 2.75 h) s 1.1 - -2.5 s - 550 mj -12 s s 1.5...
Description	Gate Turn-off Thyristor
File Size	302.08K / 14 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	SGw10N60RUFDTM
OCR Text	... @ t c = 25 c75 w maximum power dissipation @ t c = 100 c30 w t j operating junction temperature -55 to +150 c t stg s...20a 10a i c = 5a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 2 4 6 ...
Description	16 A, 600 V, N-CHANNEL IGBT, TO-263AB
File Size	623.23K / 10 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DGT305SE18 DGT305RE
OCR Text	... on(min) t off(min) s a/ s kw w a thermal ratings symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) -...20a, rise time < 1.0 s r l = (residual inductance 2.75 h) s 1.1 - -2.5 s - 550 mj -12 s s 1.5...
Description	Reverse Blocking Gate Turn-off Thyristor
File Size	302.24K / 14 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP95U03GMT-HF
OCR Text	...t a =70 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w ...20a - 4.3 4.9 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.2 1.45 2 v g fs forward t...
Description	Simple Drive Requirement, SO-8 Compatible
File Size	54.97K / 4 Page	View it Online	Download Datasheet

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