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For tamb Found Datasheets File :: 21431    Search Time::1.562ms    
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    SD101AW SD101AW-GS08 SD101AW-GS18 SD101CW-GS18 SD101BW SD101BW-GS08 SD101BW-GS18 SD101CW SD101CW-GS08

VISAY[Vishay Siliconix]
Part No. SD101AW SD101AW-GS08 SD101AW-GS18 SD101CW-GS18 SD101BW SD101BW-GS08 SD101BW-GS18 SD101CW SD101CW-GS08
OCR Text ...el Absolute Maximum Ratings tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage Test condition Part SD101AW SD101BW SD101CW Power dissipation (Infinite heatsink) Forward current Maximum single cycle surge 10 s square ...
Description Small Signal Schottky Diodes

File Size 88.73K  /  6 Page

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    74HC86D 74HC86DB 74HC86 74HC86N 74HC86PW 74HC86U 74HCT86 74HCT86D 74HCT86DB 74HCT86N 74HCT86NB 74HCT86PW 74HCT86U

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. 74HC86D 74HC86DB 74HC86 74HC86N 74HC86PW 74HC86U 74HCT86 74HCT86D 74HCT86DB 74HCT86N 74HCT86NB 74HCT86PW 74HCT86U
OCR Text ...QUICK REFERENCE DATA GND = 0 V; tamb = 25 C; tr = tf = 6 ns TYPICAL SYMBOL tPHL/ tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD x VCC2 x fi + (CL x VCC2 x fo) where: fi = input frequency in ...
Description Quad 2-input EXCLUSIVE-OR gate 输入异或
Quad 2-input EXCLUSIVE-OR gate(2输入逻辑或门) 输入异或门(输入逻辑或门

File Size 34.12K  /  6 Page

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    74HCT165 74HC165 74HC165PW 74HC165D 74HC165DB 74HC165N 74HCT165D 74HCT165DB 74HCT165N 74HCT165PW 74HCT165U 74HC165NB

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74HCT165 74HC165 74HC165PW 74HC165D 74HC165DB 74HC165N 74HCT165D 74HCT165DB 74HCT165N 74HCT165PW 74HCT165U 74HC165NB
OCR Text ...QUICK REFERENCE DATA GND = 0 V; tamb = 25 C; tr = tf = 6 ns TYPICAL SYMBOL tPHL/ tPLH PARAMETER propagation delay CP to Q7, Q7 PL to Q7, Q7 D7 to Q7, Q7 maximum clock frequency input capacitance power dissipation capacitance per package not...
Description 74HC/HCT165; 8-bit parallel-in/serial-out shift register

File Size 72.98K  /  10 Page

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    74HCU04 74HCU04D 74HCU04N 74HCU04PW 74HCU04DB

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74HCU04 74HCU04D 74HCU04N 74HCU04PW 74HCU04DB
OCR Text ...QUICK REFERENCE DATA GND = 0 V; tamb = 25 C; tr = tf = 6 ns SYMBOL tPHL/ tPLH CI CPD Note 1. CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD x VCC2 x fi + (CL x VCC2 x fO) where: fi = input frequency in MHz fo = ...
Description 74HCU04; Hex inverter

File Size 64.78K  /  7 Page

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    74LV00 74LV00D 74LV00DB 74LV00N 74LV00PW 74LV00PWDH 74LV00_2

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74LV00 74LV00D 74LV00DB 74LV00N 74LV00PW 74LV00PWDH 74LV00_2
OCR Text ...UICK REFERENCE DATA GND = 0 V; tamb = 25C; tr =tf 2.5 ns SYMBOL tPHL/tPLH CI CPD PARAMETER Propagation delay nA, nB to nY Input capacitance Power dissipation capacitance per gate tamb = 25C tamb = 25C DESCRIPTION The 74LV00 is a low-v...
Description From old datasheet system
Quad 2-input NAND gate

File Size 104.57K  /  10 Page

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    74LV573 74LV573D 74LV573DB 74LV573N 74LV573PW 74LV573PWDH 74LV573_2

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74LV573 74LV573D 74LV573DB 74LV573N 74LV573PW 74LV573PWDH 74LV573_2
OCR Text ... interface with microprocessors tamb = 25C tamb = 25C DESCRIPTION The 74LV573 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC/HCT573. The 74LV573 is an octal D-type transparent latch featuring separate...
Description From old datasheet system
Octal D-type transparent latch (3-State)
Octal D-type transparent latch 3-State

File Size 123.32K  /  14 Page

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    93C46B 93C46B-EP 93C46B-ESM 93C46B-ESN 93C46B-EST 93C46B-IP 93C46B-ISM 93C46B-ISN 93C46B-IST 93C46B-P 93C46B-SM 93C46B-S

MICROCHIP[Microchip Technology]
Part No. 93C46B 93C46B-EP 93C46B-ESM 93C46B-ESN 93C46B-EST 93C46B-IP 93C46B-ISM 93C46B-ISN 93C46B-IST 93C46B-P 93C46B-SM 93C46B-SN 93C46B-ST 93C46
OCR Text ...- -- -- 1M VCC = +4.5V to +5.5V tamb = 0C to +70C VCC = +4.5V to +5.5V tamb = -40C to +85C VCC = +4.5V to +5.5V tamb = -40C to +125C Max. VCC +1 0.8 0.4 -- 10 10 7 1 1.5 1 2 -- -- -- -- -- -- -- 400 100 500 2 6 15 -- Units V V V V A A pF mA...
Description 256 Bit/1K 5.0V CMOS Serial EEPROM
1K 5.0V Microwire Serial EEPROM

File Size 91.28K  /  12 Page

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    BAV21W-TP

Micro Commercial Components
Part No. BAV21W-TP
OCR Text ...250 v i f forward dc current at tamb=25 o c (1) 250 ma i f(av) rectified current (average) half wave rectification with resist. load at tamb=25 o c (1) 200 ma i frm repetitive peak forward current at f>50hz, tamb=25 o c (1) 625 ma i fsm...
Description 410mW Small Signal Diodes 120 to 250 Volts

File Size 322.39K  /  4 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ...de VR IF IFRM IFSM Ptot Tstg Tj tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature op...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ... = 20 mA; VCE = 6 V; f = 1 GHz; tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; tamb = 25 C - IC = 20 mA; VCE = 6 V; f = 900 MHz; tamb = 25 C 16 s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz - 1998 Oct 02 2 Philips Semiconductors ...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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