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  silicon carbide power Datasheet PDF File

For silicon carbide power Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    STPSC606 STPSC606D STPSC606G-TR

STMicroelectronics
Part No. STPSC606 STPSC606D STPSC606G-TR
Description 6 A, 600 V, silicon carbide, RECTIFIER DIODE, TO-220AC
600 V power Schottky silicon carbide diode

File Size 87.17K  /  8 Page

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    Sensitron Semiconductor
Part No. SHB636053E
Description HIGH VOLTAGE silicon carbide SINGLE PHASE FULL WAVE BRIDGE 5 A, silicon carbide, BRIDGE RECTIFIER DIODE

File Size 40.91K  /  2 Page

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    STPSC406 STPSC406B-TR STPSC406D

STMicroelectronics
Part No. STPSC406 STPSC406B-TR STPSC406D
Description 4 A, 600 V, silicon carbide, RECTIFIER DIODE
600 V power Schottky silicon carbide diode

File Size 88.34K  /  8 Page

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    SSR40C20 SSR40C30 SSR40C30CT SSR40C20CTM

SOLID STATE DEVICES INC
Solid States Devices, Inc
Part No. SSR40C20 SSR40C30 SSR40C30CT SSR40C20CTM
Description 20 A, 200 V, silicon carbide, RECTIFIER DIODE, TO-254AA
40A / 300V Schottky silicon carbide Centertap Rectifier

File Size 136.97K  /  2 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    SDT10S60

Infineon Technologies AG
Part No. SDT10S60
Description silicon carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
silicon carbide Schottky Diodes - 10A diode in TO220-2 package

File Size 202.66K  /  8 Page

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. FBS10-06SC IXYSCORP-FBS10-06SC
Description silicon carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, silicon carbide, BRIDGE RECTIFIER DIODE
 

File Size 30.18K  /  2 Page

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    SHD619112P

SENSITRON SEMICONDUCTOR
Part No. SHD619112P
Description HERMETIC silicon carbide RECTIFIER
10 A, 1200 V, silicon carbide, RECTIFIER DIODE

File Size 42.59K  /  4 Page

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    SHD626031 SHD626031D SHD626031N SHD626031P SHD62603109

Sensitron Semiconductor
Part No. SHD626031 SHD626031D SHD626031N SHD626031P SHD62603109
Description HERMETIC silicon carbide RECTIFIER 8 A, silicon carbide, RECTIFIER DIODE, TO-257AA

File Size 61.03K  /  3 Page

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    SML100M12MSF SML010FBDH06 SML10SIC06YC SML05SC06D3A

Seme LAB
Part No. SML100M12MSF SML010FBDH06 SML10SIC06YC SML05SC06D3A
Description silicon carbide power

File Size 132.02K  /  2 Page

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