|
|
 |
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|
Part No. |
R5509-72 R5509-42
|
OCR Text |
...RATURE
B-Doped Si (111)
low resistivity wafer > 0.02 kcm
Silicon, the indirect bandgap semiconductor, has lower photoluminescence emission compared with direct bandgap semiconductors such as GaAs, InP, etc. However, the NIR-PMT has ma... |
Description |
NIR PHOTOMULTIPLIER TUBES
|
File Size |
389.92K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
MOTOROLA[Motorola, Inc]
|
Part No. |
AN211A
|
OCR Text |
... Figure 1, is of relatively low resistivity material to maximize gain. For the same purpose, Gate 1 is of very low resistivity material, allowing the depletion region to spread mostly into the n-type channel. In most cases the gates are int... |
Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
|
File Size |
327.70K /
12 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|