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  punch Datasheet PDF File

For punch Found Datasheets File :: 1678    Search Time::1.359ms    
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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ...2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 13.5 2) 15.6 9
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    APT50GF120B2R APT50GF120LR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50GF120B2R APT50GF120LR
OCR Text ... voltage power IGBTs. Using Non-punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. T-MaxTM (B2R) * Low Forward Voltage Drop * Low Tail Current * Avalanche Rate...
Description The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代
Fast IGBT 1200V 80A

File Size 37.28K  /  3 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-247 C * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50GF60HR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50GF60HR
OCR Text punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-258 * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated * Hermetic Package MAXIMUM RATINGS ...
Description Fast IGBT 600V 55A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 25.29K  /  2 Page

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    BTS100 C67078-A5007-A2 BTS100E3044A BTS100S-3789DELCO BTS100E3045A

Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BTS100 C67078-A5007-A2 BTS100E3044A BTS100S-3789DELCO BTS100E3045A
OCR Text ...2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 13.5 2) 15.6 9
Description P-Channel TEMPFET
Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)
From old datasheet system

File Size 301.68K  /  9 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text ...ode The HGTG11N120CND is a Non-punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input im...
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text ...20BN and HGT1S10N120BNS are Non-punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input i...
Description 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ...N and the HGT1S5N120BNS are Non-punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input i...
Description From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 81.48K  /  7 Page

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    HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND

INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
Part No. HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text ...0CND and HGT1S5N120CNDS are Non-punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input i...
Description From old datasheet system
25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247

File Size 86.05K  /  7 Page

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    HGTP5N120CN HGT1S5N120CNS FN4596

INTERSIL[Intersil Corporation]
Part No. HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text ...120CN and HGT1S5N120CNS are Non-punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input i...
Description From old datasheet system
25A 1200V NPT Series N-Channel IGBT
25A, 1200V, NPT Series N-Channel IGBT
25A/ 1200V/ NPT Series N-Channel IGBT

File Size 79.50K  /  7 Page

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For punch Found Datasheets File :: 1678    Search Time::1.359ms    
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