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    PHP4N40E PHB4N40E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. php4n40e PHB4N40E
OCR Text ...nce * Low thermal resistance php4n40e, PHB4N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 4.4 A RDS(ON) 1.8 s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in of...
Description PowerMOS transistors Avalanche energy rated
File Size 77.80K  /  9 Page

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    PHX4ND40E

NXP Semiconductors
Philips Semiconductors
Part No. PHX4ND40E
OCR Text ...n) ID 1 VDS tp 125 C php4n40e 1 0.1 1E-06 1E-05 1E-04 Avalanche time, tp (s) 1E-03 1E-02 0 10 20 30 40 RG, Gate resistance (Ohms) 50 60 Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) Fig.1...
Description PowerMOS transistors FREDFET, Avalanche energy rated
File Size 72.32K  /  8 Page

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    PHP4ND40E PHB4ND40E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP4ND40E PHB4ND40E
OCR Text ...n) ID 1 VDS tp 125 C php4n40e 1 0.1 1E-06 1E-05 1E-04 Avalanche time, tp (s) 1E-03 1E-02 0 10 20 30 40 RG, Gate resistance (Ohms) 50 60 Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) Fig.1...
Description PowerMOS transistors FREDFET, Avalanche energy rated
File Size 59.64K  /  9 Page

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    PHX4N40E

NXP Semiconductors
Philips Semiconductors
Part No. PHX4N40E
OCR Text ...n) ID 1 VDS tp 125 C php4n40e 1 0.1 1E-06 1E-05 1E-04 Avalanche time, tp (s) 1E-03 1E-02 0 10 20 30 40 RG, Gate resistance (Ohms) 50 60 Fig.14. Typical switching times; td(on), tr, td(off), tf ...
Description PowerMOS transistors Avalanche energy rated
File Size 71.55K  /  8 Page

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    PHX2N40E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX2N40E
OCR Text php4n40e GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performanc...
Description PowerMOS transistor Isolated version of php4n40e
File Size 20.17K  /  5 Page

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