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MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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| Part No. |
mrfg35010mt1
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| OCR Text |
mrfg35010mt1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class... |
| Description |
mrfg35010mt1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
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| File Size |
297.18K /
8 Page |
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