measured pdf Datasheet P1 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MB84V BTS117TC 74LS373P HA358 55C5V DD128F 74HC423N DF30JC1S
	Product Description
	Full Text Search

measured Datasheet PDF File

For measured Found Datasheets File :: 144169 Search Time::2.875ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				http:// ONSEMI[ON Semiconductor]
Part No.	1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMCXXXAT3 15SMC68AT3 1.5SMCXXXAT3G 1.5SMC11AT3 1.5SMC13AT3 1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3 1.5SMC22AT3 1.5SMC27AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC6.8AT3 1.5SMC62AT3G 1.5SMC82AT3 1.5SMC9.1AT3 1.5SMC91AT3 1.5SMC62AT3 1.5SMC16A 1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC43A 1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC68A 1.5SMC82A 1.5SMC15A 1.5SMC62A 1.5SMC75A 1.5SMC75AT3
OCR Text	...DC Power Dissipation @ TL = 75C measured Zero Lead Length (Note 2) Derate Above 75C Thermal Resistance from Junction-to-Lead DC Power Dissipation (Note 3) @ TA = 25C Derate Above 25C Thermal Resistance from Junction-to-Ambient Forward Surge...
Description	Zener Diode Transistor Suppressor High Power 1500 Watt Peak Power Zener Transient Voltage Suppressors ELR 2/1-230Z 1500 Watt Peak Power Zener Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
File Size	73.47K / 8 Page	View it Online	Download Datasheet

				EPCOS AG PANASONIC[Panasonic Semiconductor]
Part No.	2SB1154
OCR Text	...th(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1154 Thermal resistance Rth(t) (C/W) 1...
Description	FILTER PLATE 10 A, 80 V, PNP, Si, POWER TRANSISTOR Silicon PNP epitaxial planar type(For power switching)
File Size	60.17K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB1155
OCR Text	...th(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1155 Thermal resistance Rth(t) (C/W) 1...
Description	Silicon PNP epitaxial planar type(For power switching)
File Size	59.98K / 3 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	...0 s, Duty Cycle 2 % Pulsed. *2 measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE EB R26 50 to 100 FB R27 80 to 160 GB R28 125 to 250 2 2SC5011 TYPICAL CHARACTERISTICS (TA = 2...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	...0 s, Duty Cycle 2 % Pulsed. *2 measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE EB R36 50 to 100 FB R37 80 to 160 GB R38 125 to 250 2 2SC5012 TYPICAL CHARACTERISTICS (TA = 2...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...0 s, Duty Cycle 2 % Pulsed. *2 measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE EB R46 50 to 100 FB R47 80 to 160 GB R48 125 to 250 2 2SC5013 TYPICAL CHARACTERISTICS (TA = 2...
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5014 2SC5014-T1 2SC5014-T2
OCR Text	...0 s, Duty Cycle 2 % Pulsed. *2 measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE KB T82 75 to 150 2 2SC5014 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. A...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	48.18K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text	...0 s, Duty Cycle 2 % Pulsed. *2 measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE KB T83 75 to 150 2 2SC5015 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. A...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.94K / 8 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5032
OCR Text	...th(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 ...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	57.59K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5035
OCR Text	...Rth(t) -- t 1000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 100 (1) Thermal resistance Rth(t) (C/W) 10 ...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	61.01K / 3 Page	View it Online	Download Datasheet

For measured Found Datasheets File :: 144169 Search Time::2.875ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |