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  K6R1008V1D-JTCI08 Datasheet PDF File

For K6R1008V1D-JTCI08 Found Datasheets File :: 4+       Page :: | <1> |   

    K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R1016C1D-JTCI10/12 K6R1008C1D-JTCI10/12 K6R1008V1D-JTCI08/10 K6R1004C1D-JC

Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R1016C1D-JTCI10/12 K6R1008C1D-JTCI10/12 K6R1008V1D-JTCI08/10 K6R1004C1D-JCI10/12 K6R1004V1D-JCI08/10 K6R1016V1D-JECI08/10 K6R1008V1D-JTCI08 K6R1008C1D-JTCI12 K6R1008V1D-JTCI10 K6R1008C1D-JTCI10 K6R1004C1D-JCI12 K6R1004C1D-JCI10 K6R1004V1D-JCI10 K6R1004V1D-JCI08
Description 64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的)
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的)在商业和工业温度范围操作

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HUA FENG CIRCUIT





    K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTCI12 K6R1008V1D K6R1008V1D-JTCI08 K6R1008V1D-JTCI10 K6R1008V1D-J_TC_I10 K6R1004C1D-JC_I10 K6R1004C1D-JC_I12 K6R1004V1D-JC_I08 K6R1004V1D-JC_I10 K6R1008C1D-J_TC_I10 K6R1008C1D-J_TC_I12 K6R1008V1D-J_TC_I08 K6R1016V1D-JTICI08_10 K6R1016C1D-JTCI10_12 K6R1016C1D-JECII10_12 K6R1004V1D-JCI08_10 K6R1008V1D-JTCI08_10 K6R1016V1D-JECI08_10 K6R1008C1D-JTCI10_12
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

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    K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6R1008V1D-TC10 K6R1008V1D-JC08 K6R1016C1D-TC10 K6R1008C1D-JC10 K6R1016C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6R1008V1D-TC10 K6R1008V1D-JC08 K6R1016C1D-TC10 K6R1008C1D-JC10 K6R1016C1D-JC10 K6R1004C1D-JC10 K6R1008C1D-TI10 K6R1016C1D-EC10 K6R1016C1D-EI10 K6R1016C1D-JI10 K6R1016C1D-KC10 K6R1016C1D-KI10 K6R1016C1D-TI10 K6R1016C1D-UC10 K6R1016C1D-UI10 K6R1016V1D-UI10 K6R1004C1D K6R1004C1D-JI10 K6R1004C1D-KC10 K6R1004C1D-KI10 K6R1004V1D-JC08 K6R1004V1D-JC10 K6R1004V1D-JI08 K6R1004V1D-JI10 K6R1004V1D-KC10 K6R1004V1D-KI08 K6R1004V1D-KI10 K6R1008C1D-JI10 K6R1008C1D-KC10 K6R1008C1D-KI10 K6R1008C1D-UC10 K6R1008C1D-UI10 K6R1008V1D-JC10 K6R1008V1D-JI08 K6R1008V1D-JI10 K6R1008V1D-KC08 K6R1008V1D-KC10 K6R1008V1D-KI08 K6R1008V1D-KI10 K6R1008V1D-TC08 K6R1008V1D-TI08 K6R1008V1D-TI10 K6R1008V1D-UC08 K6R1008V1D-UC10 K6R1008V1D-UI08 K6R1008V1D-UI10 K6R1016V1D-EC08 K6R1016V1D-EC10 K6R1016V1D-EI08 K6R1016V1D-EI10 K6R1016V1D-JC08 K6R1016V1D-JI08 K6R1016V1D-JI10 K6R1016V1D-KC08 K6R1016V1D-KC10 K6R1016V1D-KI08 K6R1016V1D-KI10 K6R1016V1D-TC08 K6R1016V1D-TC10 K6R1016V1D-TI08 K6R1016V1D-TI10 K6R1016V1D-UC08 K6R1016V1D-UC10 K6R1016V1D-UI08 K6R1004C1D-KC100
Description 256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静态RAM.0V操作)
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静RAM.0V操作)

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6R1004C1D-KC10 K6R1004C1D-KI10 K6R1004V1D K6R1004V1D-JC08 K6R1004V1D-JC08_10 K6R1004V1D-JC10 K6R1004V1D-JI08 K6R1004V1D-JI08_10 K6R1004V1D-JI10 K6R1004V1D-KC08 K6R1004V1D-KC08_10 K6R1004V1D-KI08 K6R1004V1D-KI08_10 K6R1004V1D-KI10 K6R1008C1D-JC10 K6R1008C1D-JI10 K6R1008C1D-KC10 K6R1008C1D-KI10 K6R1008C1D-TC10 K6R1008C1D-UC10 K6R1008C1D-UI10 K6R1008V1D-JC08 K6R1008V1D-JC08_10 K6R1008V1D-JC10 K6R1008V1D-JI08 K6R1008V1D-JI08_10 K6R1008V1D-JI10 K6R1008V1D-KC08 K6R1008V1D-KC08_10 K6R1008V1D-KC10 K6R1008V1D-KI08 K6R1008V1D-KI08_10 K6R1008V1D-KI10 K6R1008V1D-TC08 K6R1008V1D-TC08_10 K6R1008V1D-TC10 K6R1008V1D-TI08 K6R1008V1D-TI08_10 K6R1008V1D-TI10 K6R1008V1D-UC08 K6R1008V1D-UC08_10 K6R1008V1D-UC10 K6R1008V1D-UI08 K6R1008V1D-UI08_10 K6R1008V1D-UI10 K6R1016C1D-EC10 K6R1016C1D-EI10 K6R1016C1D-JC10 K6R1016C1D-JI10 K6R1016C1D-KC10 K6R1016C1D-KI10 K6R1016C1D-TC10 K6R1016C1D-TI10 K6R1016C1D-UC10 K6R1016C1D-UI10 K6R1016V1D-EC08 K6R1016V1D-EC08_10 K6R1016V1D-EC10 K6R1016V1D-EI08 K6R1016V1D-EI08_10 K6R1016V1D-EI10 K6R1016V1D-JC08 K6R1016V1D-JC08_10 K6R1016V1D-JC10 K6R1016V1D-JI08 K6R1016V1D-JI08_10 K6R1016V1D-JI10 K6R1016V1D-KC08 K6R1016V1D-KC08_10 K6
Description 256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的)在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP

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