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  K4E640412E-TI60 Datasheet PDF File

For K4E640412E-TI60 Found Datasheets File :: 21+       Page :: | <1> | 2 | 3 |   

    K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4E640412E-TP45 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP60 K4E64041

SAMSUNG[Samsung semiconductor]
Part No. K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4E640412E-TP45 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP60 K4E640412E K4E640412E-JI45 K4E640412E-JI50 K4E640412E-JI60 K4E640412E-JP45 K4E640412E-JP50 K4E640412E-JP60 K4E660412E K4E660412E-JI45 K4E660412E-JI50 K4E660412E-JI60 K4E660412E-JP45 K4E660412E-JP50 K4E660412E-JP60 K4E660412E-TI45 K4E660412E-TI50 K4E660412E-TI60 K4E660412E-TP45 K4E660412E-TP50
Description 16M x 4bit CMOS Dynamic RAM with Extended Data Out

File Size 191.44K  /  21 Page

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HUA FENG CIRCUIT





    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4E640412E-JP50 K4E640412E-JI45 K4E640412E-JI60 K4E640412E-JI50 K4E640412E-JP60 K4E660412E-JI50 K4E660412E-JP50 K4E660412E-JP45 K4E660412E-TI60 K4E640412E-TI45 K4E660412E-TI45 K4E640412E-TI60 K4E640412E-TI50 K4E660412E-JP60 K4E660412E-TI50 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP45 K4E660412E-TP50 K4E640412E-TP45
Description Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk
CONNECTOR ACCESSORY
16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输

File Size 196.05K  /  21 Page

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    TI600 EC-250 EC-600

Cooper Bussmann, Inc.
Part No. TI600 EC-250 EC-600
Description Indicator System and Fuse Bases (Blocks)

File Size 44.44K  /  1 Page

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    K4E640412E

Samsung semiconductor
Part No. K4E640412E
Description (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM

File Size 235.92K  /  21 Page

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    PTI60022

celduc-relais
Part No. PTI60022
Description MAGNETIC PROXIMITY SENSOR

File Size 388.23K  /  2 Page

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    PTI60021

celduc-relais
Part No. PTI60021
Description MAGNETIC PROXIMITY SENSOR

File Size 345.79K  /  2 Page

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    4R3TI60Y-080

COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
http://
Part No. 4R3TI60Y-080
Description DIODE and TYRISTOR MODULE

File Size 130.73K  /  5 Page

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    COLLMER SEMICONDUCTOR INC
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
http://
Part No. 3R3TI60E-080
Description DIODE and TYRISTOR MODULE 94.2 A, 800 V, SCR

File Size 125.91K  /  5 Page

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    STI60N55F3

STMicroelectronics
Part No. STI60N55F3
Description N-channel Power MOSFET

File Size 635.77K  /  20 Page

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Part No. STIP10 STI60 STI80 STI90 STIP805 STIP60
Description SURGE ARRESTER GDT 90V SMD
DIODE TVS 9.1V 600W BIDIR 5% SMB
TRANSISTOR | BJT | NPN | 900V V(BR)CEO | 1A I(C) | TO-5
DIODE TVS 47V 600W UNIDIR 5% SMB 晶体管|晶体管|叩| 600V的五(巴西)总裁| TO - 39封装
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes

File Size 125.32K  /  1 Page

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For K4E640412E-TI60 Found Datasheets File :: 21+       Page :: | <1> | 2 | 3 |   

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Part: K4E640412E-TC50
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