K4E640412E-JI60 pdf Datasheet P1 Part Num --- IC-ON-LINE


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K4E640412E-JI60 Datasheet PDF File

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					SAMSUNG[Samsung semiconductor]
Part No.	K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4E640412E-TP45 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP60 K4E640412E K4E640412E-JI45 K4E640412E-JI50 K4E640412E-JI60 K4E640412E-JP45 K4E640412E-JP50 K4E640412E-JP60 K4E660412E K4E660412E-JI45 K4E660412E-JI50 K4E660412E-JI60 K4E660412E-JP45 K4E660412E-JP50 K4E660412E-JP60 K4E660412E-TI45 K4E660412E-TI50 K4E660412E-TI60 K4E660412E-TP45 K4E660412E-TP50
Description	16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size	191.44K / 21 Page	View it Online	Download Datasheet

HUA FENG CIRCUIT

					SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4E640412E-JP50 K4E640412E-JI45 K4E640412E-JI60 K4E640412E-JI50 K4E640412E-JP60 K4E660412E-JI50 K4E660412E-JP50 K4E660412E-JP45 K4E660412E-TI60 K4E640412E-TI45 K4E660412E-TI45 K4E640412E-TI60 K4E640412E-TI50 K4E660412E-JP60 K4E660412E-TI50 K4E640412E-TP50 K4E640412E-TP60 K4E660412E-TP45 K4E660412E-TP50 K4E640412E-TP45
Description	Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk CONNECTOR ACCESSORY 16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输
File Size	196.05K / 21 Page	View it Online	Download Datasheet

					Samsung semiconductor
Part No.	K4E640412E
Description	(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
File Size	235.92K / 21 Page	View it Online	Download Datasheet

					New Jersey Semi-Conductor P... New Jersey Semiconductors New Jersey Semi-Conduct...
Part No.	MJH16010 MJH16012 MJIB010 MJI6012
Description	Power Transistors
File Size	120.98K / 3 Page	View it Online	Download Datasheet

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Part: K4E640412E-TC50

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