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  isoplus220 Datasheet PDF File

For isoplus220 Found Datasheets File :: 73    Search Time::1.141ms    
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    DSEA29-06AC

IXYS, Corp.
IXYS Corporation
Part No. DSEA29-06AC
OCR Text isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse test: pulse width = 300 s, duty cycle < 2.0 % i...
Description Fast Recovery Diodes
HiPerDynFRED Epitaxial Diode(正向电流30A的HiPerDynFRED外延型二极管) 15 A, 600 V, SILICON, RECTIFIER DIODE
HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)

File Size 59.37K  /  2 Page

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    DSEC16-06AC

IXYS Corporation
Part No. DSEC16-06AC
OCR Text isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse test: pulse width = 300 s, duty cycle < 2.0 % i...
Description (DSEA16-06AC / DSEC16-06AC) HiPerDynFREDTM Epitaxial Diode isoplus220TM

File Size 735.67K  /  2 Page

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    IXFC110N10P

IXYS Corporation
Part No. IXFC110N10P
OCR Text ...larhv tm hiperfet power mosfet isoplus220 tm (electrically isolated back surface) isolated back surface g = gate d = drain s = source isoplus220 tm (ixfc) e153432 g d s features l silicon chip on direct-copper-bond substrate - ...
Description PolarHV HiPerFET Power MOSFET isoplus220

File Size 222.75K  /  5 Page

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    IXFC22N60P

IXYS Corporation
Part No. IXFC22N60P
OCR Text isoplus220 tm (electrically isolated back surface) n-channel enhancement mode fast intrinsic diode avalanche rated symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, ...
Description PolarHV HiPerFET Power MOSFET isoplus220

File Size 223.44K  /  5 Page

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    IXYS
Part No. DSS20-01AC
OCR Text ...sions. power schottky rectifier isoplus220 tm electrically isolated back surface features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab ca...
Description Silicon Schottky Diodes

File Size 112.58K  /  4 Page

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    DSEE8-06CC

IXYS Corporation
IXYS, Corp.
Part No. DSEE8-06CC
OCR Text isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified diodes connected in series pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse test: pulse width =...
Description HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二极管) 10 A, 300 V, SILICON, RECTIFIER DIODE

File Size 61.03K  /  2 Page

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    DSEE29-12CC

IXYS Corporation
Part No. DSEE29-12CC
OCR Text isoplus220 tm electrically isolated back surface features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab capacitance (<15pf) planar pas...
Description HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)

File Size 58.25K  /  2 Page

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    DSEE29-06CC

IXYS Corporation
IXYS, Corp.
Part No. DSEE29-06CC
OCR Text isoplus220 tm electrically isolated back surface features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab capacitance (<15pf) planar pas...
Description HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流30A的HiPerDynFRED外延型二极管) 30 A, 300 V, SILICON, RECTIFIER DIODE

File Size 58.31K  /  2 Page

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    DSEE15-06CC

IXYS Corporation
IXYS, Corp.
Part No. DSEE15-06CC
OCR Text isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified diodes connected in series pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse test: pulse width ...
Description HiPerDynFRED Epitaxial Diode(正向电流15AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流15A的HiPerDynFRED外延型二极管) 15 A, 600 V, SILICON, RECTIFIER DIODE

File Size 58.38K  /  2 Page

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    DSEC29-06AC

IXYS Corporation
Part No. DSEC29-06AC
OCR Text isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse test: pulse width = 300 s, duty cycle < 2.0 % i...
Description Fast Recovery Diodes
HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)

File Size 58.67K  /  2 Page

View it Online

Download Datasheet

For isoplus220 Found Datasheets File :: 73    Search Time::1.141ms    
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