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  irf630 Datasheet PDF File

For irf630 Found Datasheets File :: 22    Search Time::1.531ms    
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    IRF630S IRF630

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. irf630S irf630
OCR Text irf630, irf630S FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enh...
Description N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体

File Size 94.60K  /  9 Page

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    IRF630 FN1578 RF1S630SM

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. irf630 FN1578 RF1S630SM
OCR Text irf630, RF1S630SM Data Sheet June 1999 File Number 1578.2 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested,...
Description 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs
From old datasheet system

File Size 61.74K  /  7 Page

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    IRF630

IRF[International Rectifier]
Part No. irf630
OCR Text
Description    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
Power MOSFET(Vdss=200V Rds(on)=0.40ohm Id=9.0A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)

File Size 175.50K  /  6 Page

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    IRF630 IRF630FP 3006 -IRF630FP

STMICROELECTRONICS[STMicroelectronics]
Part No. irf630 irf630FP 3006 -irf630FP
OCR Text irf630 irf630FP N - CHANNEL 200V - 0.35 - 9A - TO-220/FP MESH OVERLAYTM MOSFET TYPE irf630 irf630F P s s s s V DSS 200 V 200 V R DS(on) < 0.40 < 0.40 ID 9A 9A TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dV/dt CAPABILITY VERY L...
Description    N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET
From old datasheet system
N - CHANNEL 200V - 0.35 - 9A - TO-220/FP MESH OVERLAY TM MOSFET

File Size 103.59K  /  9 Page

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    IRF630

TRANSYS Electronics Limited
Part No. irf630
OCR Text irf630 Power MOSFET VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A Drain D G S Gate Drain Source N Channel Tj = 25 C Maximum. Unless stated Otherwise Symbol Symbol ELECTRICAL CHARACTERISICS at Parameter Drain to Source Break...
Description Power MOSFET

File Size 138.31K  /  1 Page

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    IRF630

Suntac Electronic Corp.
Part No. irf630
OCR Text irf630 POWER MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES Dynamic dv/dt Rating R...
Description POWER MOSFET

File Size 121.12K  /  6 Page

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    IRF630

Inchange Semiconductor Company Limited
Part No. irf630
OCR Text irf630 N-channel mosfet transistor Features With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)U 0.4| ;ID=9A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25ae SYMBOL VDSS VGS...
Description N-channel mosfet transistor

File Size 110.99K  /  1 Page

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    IRF630

Advanced Power Electronics Corp.
Part No. irf630
OCR Text irf630 RoHS-compliant Product Advanced Power Electronics Corp. Ease of Paralleling Fast Switching Characteristic Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 0.4 9.0A S De...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 90.96K  /  4 Page

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