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MOTOROLA INC
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| Part No. |
MC14LC5480SD MC14LC5480DW
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| OCR Text |
...ive rc filter to eliminate very high frequency noise from being modulated down to the passband by the switched capacitor filter. from the ac...energy of the switched capacitor filter. the mc14lc5480 pcm codecfilter accepts a variety of clock f... |
| Description |
Regulating Pulse-Width Modulators 16-PDIP 0 to 70
5 V PCM Codec-Filter
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| File Size |
281.92K /
24 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TPCM8001-H
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| OCR Text |
High speed U-MOSIII)
TPCM8001-H
High Speed and High Efficiency DC-DC Converters Notebook PC Applications
0.5
Unit: mm
0.8 8 0.25 5
...energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25*Z (Note 4) ) Channel temperatur... |
| Description |
MOSFET TPC Series
High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications
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| File Size |
38.24K /
4 Page |
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it Online |
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MAXIM - Dallas Semiconductor
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| Part No. |
DS1220Y
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| OCR Text |
...we (write enable) is inactive (high) and ce (chip enable) and oe (output enable) are active (low). the unique address speci fied by th...energy source to ram to retain data. during power-up, when v cc rises above approximately 3.0 vo lt... |
| Description |
16K Nonvolatile SRAM
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| File Size |
157.42K /
8 Page |
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it Online |
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Advanced Power Technology Ltd.
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| Part No. |
APT65GP60L2DQ2 APT65GP60L2DQ2G
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| OCR Text |
...? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high v...energy of the igbt only, without the effect of a commutating diode reverse recovery current ... |
| Description |
POWER MOS 7 IGBT
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| File Size |
441.66K /
9 Page |
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it Online |
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Advanced Power Technology Ltd.
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| Part No. |
APT65GP60JDQ2
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| OCR Text |
...? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high v...energy of the igbt only, without the effect of a commutating diode reverse recovery current ... |
| Description |
POWER MOS 7 IGBT
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| File Size |
458.83K /
9 Page |
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it Online |
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Infineon Technologies
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| Part No. |
IPA65R660CFD
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| OCR Text |
... a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) principle and pioneered by infineon...energy, single pulse e as - - 115 mj i d =1.2 a, v dd =50 v avalanche energy, repetitive e ar - ... |
| Description |
MOSFET
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| File Size |
910.06K /
20 Page |
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it Online |
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Price and Availability
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