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For fets Found Datasheets File :: 5674    Search Time::1.234ms    
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    INTERSIL[Intersil Corporation]
Part No. ISL9208IRZ ISL9208
OCR Text ...trols: - Back-to-back N-Channel fets for charge and discharge control - Single N-Channel discharge FET. - Single N-Channel FET for discharge, with separate, optional (smaller) back-to-back N-channel fets for charge. * Integrated Charge/Disc...
Description Multi-Cell Li-ion Battery Pack OCP/Analog Front End

File Size 487.08K  /  29 Page

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    UPC3250T7L-E1 UPC3250T7L-E1-A

Renesas Electronics Corporation
Part No. UPC3250T7L-E1 UPC3250T7L-E1-A
OCR Text ...put, g sw = +3.3 v (without fets bias supply current) 50 63 80 ma total supply current 2 note (v ccrf , v ccif , v ddpll ) normal mode ( low gain selected) i cc 2 v pola > 7.0 v , non-rf input, g sw = 0 v (with...
Description SiGe CMOS/BiCMOS Integrated Circuit

File Size 292.50K  /  18 Page

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    A3984SLPTR A3984SLPTR-T A3984SLP-T A3984 A3984SLP

ALLEGRO[Allegro MicroSystems]
Part No. A3984SLPTR A3984SLPTR-T A3984SLP-T A3984 A3984SLP
OCR Text ...s and all of the N-channel DMOS fets are regulated with fixed off-time PMW (pulse width modulated) control circuitry. At each step, the current for each full-bridge is set by the value of its external current-sense resistor (RS1 or RS2), a ...
Description DMOS Microstepping Driver with Translator

File Size 667.14K  /  13 Page

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    INTERSIL[Intersil Corporation]
Part No. HIP408304 HIP4083ABZ HIP4083APZ HIP4083AP HIP4083AB HIP4083
OCR Text ...omatically every time the lower fets turn-on and the upper fets turn-off. However, it is still possible to use the HIP4083 in applications that require the high side fets to be on for extended periods of time. This can be easily accomplishe...
Description Driver, Three Phase High Side, 80V, 300mA, Drives Three High Side N-Channel MOSfets
80V, 300mA Three Phase High Side Driver

File Size 238.44K  /  10 Page

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    USB2227-NE-XX USB2228 USB2227 USB2227-NU-XX USB2228-NE-XX USB2228-NU-XX

SMSC Corporation
Part No. USB2227-NE-XX USB2228 USB2227 USB2227-NU-XX USB2228-NE-XX USB2228-NU-XX
OCR Text fets PRODUCT FEATURES Datasheet Complete System Solution for interfacing SmartMediaTM (SM) or xD Picture CardTM (xD)1, Memory StickTM (MS), High Speed Memory Stick (HSMS), Memory Stick PRO (MSPRO), MS DuoTM, Secure Digital (SD), ...
Description 4TH GENERATION USB2.0 FLASH MEDIA CONTROLLER WITH INTEGRATED CARD POWER fets

File Size 721.77K  /  26 Page

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    FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F FSPYE234F3 FSPYE234R FSPYE234R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F FSPYE234F3 FSPYE234R FSPYE234R3
OCR Text ...ss Power Subsystems. Star*Power fets combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil FS families have alway...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSfets
Radiation Hardened, SEGR Resistant N-Channel Power MOSfets 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSfets(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)

File Size 78.32K  /  8 Page

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    FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3
OCR Text ...ss Power Subsystems. Star*Power fets combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have alway...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSfets
Radiation Hardened, SEGR Resistant N-Channel Power MOSfets 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 82.63K  /  8 Page

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    FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3
OCR Text ...ss Power Subsystems. Star*Power fets combine this electrical capability with total dose radiation hardness up to 300K RADS while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have alway...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSfets
Radiation Hardened, SEGR Resistant N-Channel Power MOSfets(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
Radiation Hardened, SEGR Resistant N-Channel Power MOSfets 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 82.56K  /  8 Page

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    FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3
OCR Text ...ss Power Subsystems. Star*Power fets combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil FS families have alway...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSfets 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSfets

File Size 80.46K  /  8 Page

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For fets Found Datasheets File :: 5674    Search Time::1.234ms    
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