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For eoss Found Datasheets File :: 370    Search Time::3ms    
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    IPW60R070C6

Infineon Technologies AG
Part No. IPW60R070C6
OCR Text ...ue to very low FOM Rdson*Qg and eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free gate pin 1 source pin 3 Applications PFC stages, hard switching PWM stages and resonant switchin...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 1,563.38K  /  13 Page

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    Infineon Technologies A...
Part No. IPU60R2K0C6
OCR Text ...uetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfc...
Description    Metal Oxide Semiconductor Field Effect Transistor

File Size 2,044.92K  /  15 Page

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    Infineon Technologies A...
Part No. IPL65R660E6
OCR Text ...uetoverylowfomrdson*qgandeoss ?pb-freeplating,halogenfree ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages for...
Description Reduced board space consumption

File Size 1,595.18K  /  15 Page

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    Infineon Technologies A...
Part No. IPL65R420E6
OCR Text ...uetoverylowfomrdson*qgandeoss ?pb-freeplating,halogenfree ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages for...
Description Reduced board space consumption

File Size 1,586.13K  /  15 Page

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    SPW20N60S5

INFINEON[Infineon Technologies AG]
http://
Part No. SPW20N60S5
OCR Text ... 16 Typ. Coss stored energy eoss=f(VDS) 14 pF 10 4 Ciss J 12 11 eoss Coss Crss 10 9 8 7 10 3 C 10 2 6 5 4 10 1 3 2 1 10 0 0 100 200 300 400 V 600 0 0 100 200 300 4...
Description for lowest Conduction Losses
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 250.78K  /  11 Page

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    SPB07N60S5 SPDU07N60S5 SPI07N60S5 SPP07N60S5 SPPBI07N60S5

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INFINEON[Infineon Technologies AG]
Part No. SPB07N60S5 SPDU07N60S5 SPI07N60S5 SPP07N60S5 SPPBI07N60S5
OCR Text ... 15 Typ. Coss stored energy eoss=f(VDS) 5.5 16 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS J 4.5 4 eoss 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Rev. 2.1 Page 8 2004-03-...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses

File Size 328.57K  /  12 Page

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    Infineon Technologies A...
Part No. IPL65R310E6
OCR Text ...uetoverylowfomrdson*qgandeoss ?pb-freeplating,halogenfree ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages for...
Description Reduced board space consumption

File Size 1,595.52K  /  15 Page

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    SPD07N60S5 SPU07N60S5

INFINEON[Infineon Technologies AG]
Part No. SPD07N60S5 SPU07N60S5
OCR Text ... 15 Typ. Coss stored energy eoss=f(VDS) 5.5 J 4.5 4 eoss 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Rev. 2.1 Page 8 2004-03-30 SPU07N60S5 SPD07N60S5 Definition of diodes switching characterist...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 259.07K  /  11 Page

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    Infineon Technologies A...
Part No. IPL65R210CFD
OCR Text ...uetoverylowfomrdson*qgandeoss ?easytouse/drive ?qualifiedforindustrialgradeapplicationsaccordingtojedec (j-std20andjesd22) ?pb-freeplating,halogenfreemoldcompound applications 650vcoolmos?cfd2isespeciallysuita...
Description Reduced board space consumption

File Size 1,611.61K  /  15 Page

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    SPW47N60S5

INFINEON[Infineon Technologies AG]
Part No. SPW47N60S5
OCR Text ... 15 Typ. Coss stored energy eoss=f(VDS) 40 J 30 eoss 25 20 15 10 5 0 0 100 200 300 400 V 600 VDS Page 8 2003-07-02 Final data SPW47N60S5 Definition of diodes switching char...
Description for lowest Conduction Losses
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 233.05K  /  11 Page

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