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				PARA LIGHT ELECTRONICS CO.,...
Part No.	C302SR-NW
OCR Text	...dering time: within 5 sec. ? during soldering, take care not to press the tip of iron against the pin. (to prevent heat from being transferred directly to the pin.) 1) when soldering the pin of display in a jig that the package is ...
Description	0.3 INCH DUAL DIGITS DISPLAY
File Size	188.32K / 10 Page	View it Online	Download Datasheet

				Integrated Silicon Solution...
Part No.	IS42S16100
OCR Text	... are used as row address inputs during active 27 to 32 command input and a0-a7 as column address inputs during read or write command input. a10 is also used to determine the precharge mode during other commands. if a10 is low durin...
Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	1,030.98K / 81 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IKP15N65F5 PG-TO220-3
OCR Text	...all of reverse recoverycurrentduring t b di rr /dt - -190 - a/s t vj =25c, v r =400v, i f =7.5a, di f /dt =1000a/s diode reverse recovery time t rr - 22 - ns diode reverse recovery charge q rr - 0.10 - c diode peak reverse recove...
Description	650V DuoPack IGBT and Diode High speed switching series fifth generation 650V DuoPack IGBT and Diode High speed switching series fifth generation
File Size	2,467.25K / 17 Page	View it Online	Download Datasheet

				A-DATA[A-Data Technology]
Part No.	ADS6608A4A ADS6608A4A-75
OCR Text	... Selects bank to be activated during row address latch time. Selects bank for read / write during column address latch time. DQ0~DQ7 Data L(U)DQM Data Mask /RAS /CAS /WE Row Address Strobe Column Address Strobe Write Enable Data inp...
Description	Synchronous DRAM(2M X 8 Bit X 4 Banks)
File Size	200.32K / 8 Page	View it Online	Download Datasheet

				A-DATA[A-Data Technology]
Part No.	ADS6616A4A ADS6616A4A-5 ADS6616A4A-6 ADS6616A4A-7 ADS6616A4A-7.5
OCR Text	... Selects bank to be activated during row address latch time. Selects bank for read / write during column address latch time. DQ0~DQ15 Data L(U)DQM Data Mask /RAS /CAS /WE Row Address Strobe Column Address Strobe Write Enable Data in...
Description	Synchronous DRAM(1M X 16 Bit X 4 Banks)
File Size	210.32K / 8 Page	View it Online	Download Datasheet

				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A-6
OCR Text	... Selects bank to be activated during row address latch time. Selects bank for read / write during column address latch time. DQ0~DQ31 Data DQM0~3 /RAS /CAS /WE Data Mask Row Address Strobe Column Address Strobe Write Enable Data inp...
Description	Synchronous DRAM(512K X 32 Bit X 4 Banks)
File Size	229.91K / 8 Page	View it Online	Download Datasheet

				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4A-7 ADS7608A4A-75 ADS7608A4A-7.5
OCR Text	... Selects bank to be activated during row address latch time. Selects bank for read / write during column address latch time. DQ0~DQ7 Data L(U)DQM Data Mask /RAS /CAS /WE Row Address Strobe Column Address Strobe Write Enable Data inp...
Description	Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
File Size	209.31K / 8 Page	View it Online	Download Datasheet

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