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    TPC8082

Toshiba Semiconductor
Part No. TPC8082
OCR Text ... small and thin package (2) low drain-source on-resistance: r ds(on) = 3.1 m ? (typ.) (v gs = 10 v) (3) low leakage current: i dss = 10 a (max) (v ds = 30 v) (4) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) 3....
Description MOSFETs

File Size 225.25K  /  9 Page

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    2SD620 2SK620

PANASONIC[Panasonic Semiconductor]
Part No. 2SD620 2SK620
OCR Text ...m Ratings (Ta = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 10...
Description Silicon N-Channel MOS FET

File Size 35.23K  /  2 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ...nless otherwise specified Item drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch 150C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range S...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    71061 SI4831DY

http://
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 71061 SI4831DY
OCR Text ...SS OTHERWISE NOTED) Parameter drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET ...
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode

File Size 67.11K  /  6 Page

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    74AC05 74AC05SC

FAIRCHILD[Fairchild Semiconductor]
Part No. 74AC05 74AC05SC
OCR Text Drain Outputs August 1991 Revised December 1999 74AC05 Hex Inverter with Open Drain Outputs General Description The AC05 contains six inverters. Features s Outputs sink 24 mA s Open drain for wired NOR function s Radiation toler...
Description Hex Inverter with Open Drain Outputs

File Size 32.89K  /  4 Page

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    74HCU04 74HCU04D 74HCU04N 74HCU04PW 74HCU04DB

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74HCU04 74HCU04D 74HCU04N 74HCU04PW 74HCU04DB
OCR Text ... Fig.7 _____ VO; _ _ _ _ ID (drain current); IO = 0; VCC = 6.0 V. Fig.8 ______ VO; _ _ _ _ ID (drain current); IO = 0; VCC = 4.5 V. Fig.9 _____ VO; _ _ _ _ ID (drain current); IO = 0; VCC = 2.0 V. September 1993 5 Ph...
Description 74HCU04; Hex inverter

File Size 64.78K  /  7 Page

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    FreesCale
Part No. MC4807
OCR Text ...um junction temperature pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise...
Description Dual P-Channel 30-V (D-S) MOSFET

File Size 409.08K  /  5 Page

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    STT3810N

SeCoS Halbleitertechnologie GmbH
Part No. STT3810N
OCR Text ... parameter symbol ratings unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v t a = 25 c 6 continuous drain current 1 t a = 100 c i d 3.6 a pulsed drain current 2 i dm 20 a continuous source curre...
Description N-Channel Enhancement Mode Mos.FET

File Size 453.37K  /  4 Page

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    PMXB56EN

NXP Semiconductors
Part No. PMXB56EN
OCR Text ...ge: 1.1 1.0 0.37 mm ? exposed drain pad for excellent thermal conduction ? very low drain-source on-state resistance r dson = 49 m? ? very fast switching 3. applications ? low-side load switch and charging switch for portable devices ? p...
Description 30 V, N-channel Trench MOSFET

File Size 269.10K  /  15 Page

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    DMP2066UFDE DMP2039UFDE4-7

Diodes Incorporated
Part No. DMP2066UFDE DMP2039UFDE4-7
OCR Text ...cteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain current (note 5) v gs = -4.5v steady state t a = +25c t a = +70c i d -6.2 -4.9 a t<5s t a = +25c t a =...
Description 25V P-CHANNEL ENHANCEMENT MODE MOSFET
   25V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 172.27K  /  6 Page

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