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ADOS
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Part No. |
GTR210
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OCR Text |
...ections 3 = inert pellistor 4 = diffusion flter the gas transmitter a dos gtr 210 is suitable for continuous measurement of gases in normal areas and areas where there are risks of explosion. by employing 6 different types of sensor, noxi... |
Description |
Gastransmitter
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File Size |
240.76K /
4 Page |
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it Online |
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Agilent Technologies, Inc.
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Part No. |
HMPP-3893-BLK
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OCR Text |
...or diode epi switching diode p+ diffusion bulk i-layer n+ diffusion metal contact contact over p+ diffusion n+ substrate epi i-layer figure 14. pin diode construction. applications information pin diodes in rf and microwave networks, m... |
Description |
100 V, SILICON, PIN DIODE LEADLESS, ULTRA MINI, QFN, MINIPAK-4
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File Size |
482.87K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
PX1011BI-EL1 X1011B-EL1
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OCR Text |
...ull basic type number b xxxxxxx diffusion lot number c 2pnyyww manufacturing code: 2 = diffusion site p = assembly site n = leaded yy = year code ww = week code table 4. lead-free package marking line marking description a px1011b-el1/g px1... |
Description |
PCI Express stand-alone X1 PHY
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File Size |
277.21K /
32 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
M66335FP
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OCR Text |
...kground/character levels, error diffusion, separation of image zones, and designation of regions. this controller contains not only the analog processing circuit, the a/ d converter of a 7-bit flash type and image processing memory, but als... |
Description |
FACSIMILE IMAGE DATA PROCESSOR
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File Size |
742.20K /
57 Page |
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NXP Semiconductors N.V.
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Part No. |
PX1011B-EL1/N551 PX1011B-EL1/N557 PX1011BI-EL1/G518
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OCR Text |
...ull basic type number b xxxxxxx diffusion lot number c 2pnyyww manufacturing code: 2 = diffusion site p = assembly site n = leaded yy = year code ww = week code table 4. lead-free package marking line marking description a px1011b-el1/g px1... |
Description |
PCI Express stand-alone X1 PHY; Package: SOT643-1 (LFBGA81); Container: Tray Dry Pack, Bakeable, Single
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File Size |
213.45K /
30 Page |
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it Online |
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SGS Thomson Microelectronics
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Part No. |
AN900
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OCR Text |
...pound like oxygen or chlorine). diffusion this step is used to introduce dopants inside the material or to grow a thin oxide layer onto the wafer. wafers are inserted into a high temperature furnace (up to 1200 c) and doping gazes penetrat... |
Description |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY
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File Size |
488.36K /
15 Page |
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it Online |
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