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聚兴科技股份有限公司
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| Part No. |
AT25F512AN-10SH-2.7
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| OCR Text |
...protection ? self-timed program cycl e (75 s/byt e typical) ? self-timed sector erase cycl e (1 second/se ctor typical) ? single cycle reprogramming (erase and program) for status register ? high reliability ? endurance: 10,000 write cycle... |
| Description |
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| File Size |
440.17K /
19 Page |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1328G-133AXI
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| OCR Text |
... to initiate a self-timed write cycl e.this part supports byte write operations (see pin definitions on page 5 and truth table on page 8 for further details). write cycl es can be one to two bytes wide as controlled by the byte write co... |
| Description |
4-Mbit (256K x 18) Pipelined DCD Sync SRAM 256K X 18 CACHE SRAM, 4 ns, PQFP100
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| File Size |
445.43K /
20 Page |
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it Online |
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Winbond Electronics, Corp.
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| Part No. |
W78E058B40PL W78E058B40FL
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| OCR Text |
...... 23 7.3.2 program fetc h cycl e ............................................................................................................ 23 7.3.3 data read cycle.................................................................. |
| Description |
8-BIT MICROCONTROLLER 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQCC44
8-BIT MICROCONTROLLER 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP44
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| File Size |
402.87K /
36 Page |
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it Online |
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Cypress Semiconductor Corp.
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| Part No. |
CY7C1346H-166AXI CY7C1346H-166AXC
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| OCR Text |
... to initiate a self-timed write cycl e.this part supports byte write operations (see pin descriptions and truth table for further details). write cycles can be one to four bytes wide as controlled by the byte write control inputs. gw whe... |
| Description |
2-Mbit (64K x 36) Pipelined Sync SRAM
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| File Size |
684.87K /
16 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WCD4C60S
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| OCR Text |
...er er er er oo oo oo oo f f f f cycl cycl cycl cycl e e e e s s s s f f f f i i i i g g g g .5 .5 .5 .5 d d d d v v v v / / / / d d d d t t t t v v v v s s s s r r r r gk gk gk gk f f f f i i i i g g g g .6 .6 .6 .6 d d d d v/ v/ v/ v/ d d ... |
| Description |
Silicon Controlled Rectifiers
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| File Size |
289.68K /
5 Page |
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it Online |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5SV16M16CS-6KI
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| OCR Text |
...rst sequence with single write cycl e for write through cache operation. operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possible with standard drams. a sequentia... |
| Description |
16M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
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| File Size |
738.28K /
65 Page |
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WINBOND ELECTRONICS CORP
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| Part No. |
W77E532P-40
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| OCR Text |
...teristics using strech memory cycl e .....................................................75 18.3.3 program memory read cycl e ......................................................................................76 18.3.4 data m... |
| Description |
8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQCC44
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| File Size |
449.93K /
88 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON7934
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| OCR Text |
...based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <3... |
| Description |
30V Dual Asymmetric N-Channel AlphaMOS
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| File Size |
622.07K /
10 Page |
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it Online |
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