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For conduction Found Datasheets File :: 26307    Search Time::3.375ms    
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    ST110S16P0PVF ST110S16P0VPVF ST110SPBF ST110S16P1PVF ST110S16P1VPVF

Vishay Siliconix
Part No. ST110S16P0PVF ST110S16P0VPVF ST110SPBF ST110S16P1PVF ST110S16P1VPVF
OCR Text ...AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 85 C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = ...
Description Phase Control Thyristors (Stud Version), 110 A

File Size 132.26K  /  7 Page

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    ST330S16P0PBF ST330S16P1PBF ST330SPBF

Vishay Siliconix
Part No. ST330S16P0PBF ST330S16P1PBF ST330SPBF
OCR Text ...AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave VALUES 330 75 DC at 75 C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t...
Description Phase Control Thyristors (Stud Version), 330 A

File Size 136.32K  /  7 Page

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    CD471290A CD420890A CD421690A CD471690A CD4290A CD421290A CD470890A

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POWEREX[Powerex Power Semiconductors]
Powerex Power Semicondu...
Part No. CD471290A CD420890A CD421690A CD471690A CD4290A CD421290A CD470890A
OCR Text ...rge Current, Non-Repetitive 180 conduction, TC=87C 180 conduction, TC=87C (AC Switch) 180 conduction, TC=87C 60 Hz, 100% VRRM reapplied, Tj=125C 60 Hz, No VRRM reapplied, Tj=125C 60 Hz, No VRRM reapplied, Tj=25C 50 Hz, 100% VRRM reapplied, ...
Description    POW-R-BLOK Dual SCR/Diode Isolated Module 90 Amperes / Up to 1600 Volts

File Size 105.46K  /  4 Page

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    CD471290 CD420890 CD421690 CD471690 CD4290 CD421290 CD470890

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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Powerex Power Semicondu...
Part No. CD471290 CD420890 CD421690 CD471690 CD4290 CD421290 CD470890
OCR Text ...rge Current, Non-Repetitive 180 conduction, TC=87C 180 conduction, TC=87C (AC Switch) 180 conduction, TC=87C 60 Hz, 100% VRRM reapplied, Tj=125C 60 Hz, No VRRM reapplied, Tj=125C 60 Hz, No VRRM reapplied, Tj=25C 50 Hz, 100% VRRM reapplied, ...
Description    POW-R-BLOK Dual SCR/Diode Isolated Module 90 Amperes / Up to 1600 Volts
R8C Series, R8C/33A Group, WDTO 32P6U-A; Vcc= 1.8 to 5.5 volts, Temp= -20 to 85 C, dataflash; Package: PLQP0052JA-A 140 A, 1600 V, SCR

File Size 101.94K  /  4 Page

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    STPS1L20MF

STMicroelectronics
Part No. STPS1L20MF
OCR Text ...ard STmite footprint Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance Avalanche capability specified Descrip...
Description Low drop power Schottky rectifier in flat package

File Size 74.68K  /  7 Page

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    SD853C40S50K SD853C30S50K SD853C45S50K SD853C36S50K

Vishay Siliconix
Part No. SD853C40S50K SD853C30S50K SD853C45S50K SD853C36S50K
OCR Text ... PUK Version), 990 A FORWARD conduction PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled ...
Description Fast Recovery Diodes (Hockey PUK Version), 990 A

File Size 227.77K  /  9 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

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FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderat...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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    SD800C24L SD800C30L SD800C36L SD800C40L SD800C45L

Vishay Siliconix
Part No. SD800C24L SD800C30L SD800C36L SD800C40L SD800C45L
OCR Text ...y PUK Version), 1200 A FORWARD conduction PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink t...
Description Standard Recovery Diodes (Hockey PUK Version), 1200 A

File Size 151.83K  /  7 Page

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderat...
Description 45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

File Size 141.01K  /  8 Page

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    HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text ...f a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is t...
Description CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 162.96K  /  9 Page

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For conduction Found Datasheets File :: 26307    Search Time::3.375ms    
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