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  CM150DU-12F Datasheet PDF File

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    CM150DU-12F

POWEREX[Powerex Power Semiconductors]
Part No. CM150DU-12F
Description Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts

File Size 342.75K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM150DU-12F
Description IGBT Modules: 600V

File Size 51.11K  /  4 Page

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    CM150DU-12F

Mitsubishi Electric Semiconductor
Part No. CM150DU-12F
Description IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT

File Size 96.67K  /  4 Page

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    CM150DUS-12F

Mitsubishi Electric Semiconductor
Part No. CM150DUS-12F
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 509.25K  /  8 Page

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    Powerex, Inc.
Part No. CM150DUS-12F
Description IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT

File Size 140.03K  /  4 Page

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    CM150DU-12H

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM150DU-12H
Description IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 50.80K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM150DU-24H
Description IGBT Modules:1200V

File Size 47.72K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM150DU-24F
Description IGBT Modules:1200V

File Size 82.01K  /  4 Page

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    CM150DU-12H

POWEREX[Powerex Power Semiconductors]
Part No. CM150DU-12H
Description Dual IGBTMOD 150 Amperes/600 Volts

File Size 56.92K  /  4 Page

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    CM150DU-24H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM150DU-24H
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 42.33K  /  4 Page

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Part: CM150DU-24H
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Unit price for :
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  100: $239.93
1000: $227.30

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