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ACT5260 SB860 203002G MC12023P ESD05 3DD13002 1N4743A 03203
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For breakdown Found Datasheets File :: 94410    Search Time::1.203ms    
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    2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA
OCR Text ...ation Voltage Collector-to-Base breakdown Voltage Collector-to-Emitter breakdown Voltage Emitter-to-Base breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg...
Description CABLE ASSEMBLY; UHF MALE TO UHF MALE; 50 OHM, RG58C/U COAX 直流/直流转换器应
NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 10A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 10A I(C) | TO-251VAR

File Size 37.35K  /  5 Page

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    2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
OCR Text ...ation Voltage Collector-to-Base breakdown Voltage Collector-to-Emitter breakdown Voltage Emitter-to-Base breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg...
Description Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 37.49K  /  5 Page

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ... - - V IC= -100A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100A - - -1.0 A VCB= -20V ICBO Collector cut-off current IEBO - - -1.0 A VEB= ...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

File Size 42.46K  /  4 Page

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency...
Description MEDIUM POWER TRANSISTOR

File Size 42.56K  /  4 Page

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    Microsemi
Part No. MSAHZ52F120A
OCR Text ... max. unit collector-to-emitter breakdown voltage (gate shorted to emitter) @ t j 3 25 c bv ces 1200 volts collector-to-gate breakdown voltage @ t j 3 25 c, r gs = 1 m w bv cgr 1200 volts continuous gate-to-emitter voltage v ges +/...
Description Insulated Gate Bipolar Transistor

File Size 51.74K  /  2 Page

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    AUIRG4BC30S-S AUIRG4BC30S-SL

International Rectifier
Part No. AUIRG4BC30S-S AUIRG4BC30S-SL
OCR Text ...nits v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 34 i c @ t c = 100c continuous collector current 18 a i cm pulsed collector current 68 i lm clamped inductive load current 68 v...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 301.87K  /  13 Page

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    MICROSEMI POWER PRODUCTS GROUP
Part No. APT6010B2LLG
OCR Text ... / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 27a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (...
Description 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 160.55K  /  5 Page

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    Silan Microelectronics
Part No. SVD8N80T
OCR Text ...yp. max. unit drain -source breakdown voltage b vdss vgs=0v, id=250a 800 -- -- v drain-source leakage current i dss vds=800v, vgs=0v -- -- 10 a gate-source leakage current i gss vgs=30v, vds=0v -- -- 100 na gate...
Description 800V N-CHANNEL MOSFET

File Size 560.64K  /  8 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ...ASO and high durability against breakdown. Adoption of MBIT process. Specifications Note*( ) : 2SA2062 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collecto...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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For breakdown Found Datasheets File :: 94410    Search Time::1.203ms    
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