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  APT46GA90JD40 Datasheet PDF File

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    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46GA90JD40
Description High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
File Size 235.94K  /  9 Page

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HUA FENG CIRCUIT





    Microsemi
Part No. APT46GA90JD40
Description IGBT w/ anti-parallel diode
File Size 215.33K  /  9 Page

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