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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
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| Part No. |
MAX9981 MAX9981EGX-T
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| OCR Text |
...2 TA = +85C TA = +25C 0 820 840 860 880 900 920 RF FREQUENCY (MHz)
2 PLO = -5dBm, 0dBm, +5dBm 1
2 VCC = 4.75V, 5.0V, 5.25V 1
1
0...915MHz, Dual SiGe High-Linearity Active Mixer
Typical Operating Characteristics (continued)
(Typic... |
| Description |
825MHz to 915MHz Dual SiGe High-Linearity Active Mixer
825MHz to 915MHz / Dual SiGe High-Linearity Active Mixer
825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC36
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| File Size |
406.31K /
15 Page |
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it Online |
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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
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| Part No. |
MAX9982 MAX9982ETP
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| OCR Text |
...5 TA = +25C 2.0 1.5 1.0 820 840 860 880 900 TA = -40C
TA = +85C 920
820
840
860
880
900
920
RF FREQUENCY (MHz)
RF...915MHz, SiGe High-Linearity Active Mixer MAX9982
Typical Operating Characteristics (continued)
(Ty... |
| Description |
"825MHz to 915MHz, SiGe High-Linearity Active Mixer"
825MHz to 915MHz / SiGe High-Linearity Active Mixer
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| File Size |
391.66K /
12 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SLD-1026Z
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| OCR Text |
...IM5
-60 -65 -70
0 820 840 860 880 900 920 Frequency (MHz)
-60 940
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0
CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA... |
| Description |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
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| File Size |
819.50K /
21 Page |
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it Online |
Download Datasheet |
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|
|
sirenza.com
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| Part No. |
SLD-1026Z
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| OCR Text |
...IM5
-60 -65 -70
0 820 840 860 880 900 920 Frequency (MHz)
-60 940
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0
CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA... |
| Description |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
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| File Size |
823.65K /
21 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
M68741 68741
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| OCR Text |
...MHz PO VDD=7.2V VGG=5V T
0 0 860 870 880 890 900 910 920 930 940 FREQUENCY f (MHz)
INPUT POWER Pin (dBm)
OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10.0 100 f=915MHz PO VDD=7.2V VGG=5V T
OUTPUT POWER, TOTAL EFFICIENCY VS. GA... |
| Description |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO 硅场效应晶体管功率放大器89 - 915MHz.8W，便携式收音机调
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| File Size |
27.72K /
3 Page |
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