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  800v Datasheet PDF File

For 800v Found Datasheets File :: 6721    Search Time::4.125ms    
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    Infineon Technologies A...
Part No. IPD80R900P7
OCR Text 800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years p...
Description 800v CoolMOSa P7 Power Transistor

File Size 1,151.50K  /  13 Page

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    Infineon Technologies A...
Part No. IPD80R750P7
OCR Text 800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years p...
Description 800v CoolMOSa P7 Power Transistor

File Size 1,130.95K  /  13 Page

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    Infineon Technologies A...
Part No. IPD80R600P7
OCR Text 800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years p...
Description 800v CoolMOSa P7 Power Transistor

File Size 1,143.34K  /  13 Page

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    YG226S8

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. YG226S8
OCR Text 800v / 5A) Outline drawings, mm 4.50.2 2.70.2 6.3 2.70.2 1 3 3.70.2 1.20.2 13Min Features Insulated package by fully molding High voltage by mesa design High reliability 5.080.4 0.70.2 150.3 0.60.2 2.70.2 JE...
Description FAST RECOVERY DIODE

File Size 51.95K  /  3 Page

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    IRHY7G30CMSE

International Rectifier
Part No. IRHY7G30CMSE
OCR Text ...A VDS > 15V, IDS = 0.76A VDS = 800v ,VGS=0V VDS = 800v, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =12V, ID = 1.2A VDS = 300V VDD = 500V, ID = 1.2A, VGS =12V, RG = 7.5 BVDSS Drain-to-Source Breakdown Voltage 1000 BV DSS/T J Temperature...
Description 1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY

File Size 108.18K  /  8 Page

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    IRG4PH50KDPBF IRG4PH50KDPBF-15

International Rectifier
Part No. IRG4PH50KDPBF IRG4PH50KDPBF-15
OCR Text ...TJ = 25C ns 300 IC = 24A, VCC = 800v 300 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 7.9 See Fig. 9,10,18 -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, See Fig. 10,11,18 -- IC = 24A, V...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
45 A, 1200 V, N-CHANNEL IGBT, TO-247AC

File Size 673.46K  /  11 Page

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    SGW25N12009 SGW25N120

Infineon Technologies AG
Part No. SGW25N12009 SGW25N120
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 350W 300W 250W 200W 150W 100W 50W 0W 25C 60A 50A IC, COLLECTOR CURRENT 50...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 331.27K  /  11 Page

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    SKW25N12008

Infineon Technologies AG
Part No. SKW25N12008
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 350W 300W 250W 200W 150W 100W 50W 0W 25C 60A 50A IC, COLLECTOR CURRENT ...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 324.07K  /  13 Page

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    SGB02N12007 SGB02N120

Infineon Technologies AG
Part No. SGB02N12007 SGB02N120
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 7A 60W 6A 50W 5A 4A 3A 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, CO...
Description Fast IGBT in NPT-technology Lower Eoff compared to previous generation

File Size 433.31K  /  11 Page

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    SGP02N12007 SGP02N120 SGD02N120 SGI02N120

Infineon Technologies AG
Part No. SGP02N12007 SGP02N120 SGD02N120 SGI02N120
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 7A 60W 6A 50W 5A 4A 3A 2A 1A 0A 25C 40W 30W 20W 10W 0W 25C IC, CO...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 375.94K  /  13 Page

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For 800v Found Datasheets File :: 6721    Search Time::4.125ms    
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