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  8.50-9.60ghz Datasheet PDF File

For 8.50-9.60ghz Found Datasheets File :: 30    Search Time::1.75ms    
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    FMPA2151

Fairchild Semiconductor
Part No. FMPA2151
OCR Text ...des system noise floor of EVM=0.8%. 3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. ...50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 S11 (dB) S21 (dB) S22 (dB) Fre...
Description 2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)

File Size 80.55K  /  6 Page

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    TGA2923-SG

TriQuint Semiconductor
Part No. TGA2923-SG
OCR Text ...m SCL, Typical Bias Conditions: 8 V @ 1.2 A (Quiescent) 0.5 m HFET Technology 2 lead Cu-alloy base and internally partially matched package ...50 0 0.5 1 1.5 2 2.5 3 3.5 S12 S22 4 4.5 5 Frequency (GHZ) 42 40 38 Pout (dBm) 36...
Description 10 Watt MMDS Packaged Amplifier

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    FMM5125X

SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Eudyna Devices Inc
Part No. FMM5125X
OCR Text ... 14.25~16 GHz f = 57~64 GHz 100 8 12 -5 5 - Unit dBm mA dB dB These values are representative for CW on chip measurements that are...50 60 70 80 90 100 Frequency (GHz) |S22| (dB) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 10 20 30 40 50...
Description 15/60GHz Frequency Multiplier MMIC

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    United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
Part No. CHA2157-99F_00 CHA2157 CHA2157-99F/00
OCR Text ...ression Bias current Min 55 8 Typ Max 60 Unit GHz dB dB dBm 10 3.5 12 4.5 13 15 80 150 mA ESD Protection : ...50 51 52 53 54 55 56 57 58 59 60 S11 dB -6,19 -6,01 -5,78 -5,57 -5,32 -5,04 -4,8 -4,5 -4,32 -4,06 -3...
Description 55-60GHz Low Noise / Medium Power Amplifier 55 - 60GHz的低噪声/中等功率放大

File Size 111.19K  /  6 Page

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    SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
EUDYNA[Eudyna Devices Inc]
Part No. FMM5715X
OCR Text ...V f = 57~64 GHz 12 14 16 18 150 8 8 - Unit dBm dB mA dB dB These values are representative for CW on chip measurements that are made ...50 55 60 Frequency (GHz) 65 70 VGG = -0.1 V, IDD = 130 mA VGG = -0.2 V, IDD = 100 mA VGG = 0 V, IDD...
Description 60GHz Power Amplifier

File Size 272.27K  /  10 Page

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    SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
EUDYNA[Eudyna Devices Inc]
Part No. FMM5716X
OCR Text ... VDD = 3V, IDD = 30 mA 12 10 8 P o u t (d B m ) 6 4 Pin = -16 dBm Pin = -8 dBm P1dB Pin = -10 dBm Pin = -12 dBm Pin = -14 dBm 2 ...50 -60 0 20 40 60 80 100 Frequency (GHz) -10 -15 -20 -25 0 20 40 60 80 100 Frequency (GHz) Typ...
Description 60GHz Low Noise Amplifier

File Size 249.43K  /  9 Page

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    MT4S102T

Toshiba Semiconductor
Part No. MT4S102T
OCR Text ... 0.0 0.2 0.4 0.6 0.8 1.0 Base-Emitter voltage VBE(V) |S21e|2-IC 20 1V Collector-current IC(mA) fT-IC 35 VCE=2V ...50 25 0 0 25 50 75 100 125 150 175 Ambient temperature Ta() 4 2007-11-01 Associate...
Description UHF-SHF Low Noise Amplifier Application

File Size 118.32K  /  5 Page

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    MT4S100T07

Toshiba Semiconductor
Part No. MT4S100T07
OCR Text ...6 IE=0 f=1MHz Ta=25C Cob 2.0 1.8 1.6 Ga NF,Ga-IC 20 18 14 12 NF VCE=2V f=2GHz Ta=25C 1 10 10 8 6 4 2 16 Output Capacitance Cob(pF) ...50 75 100 125 150 175 Ambient temperature Ta(C) 4 2007-11-01 Associated Gain Ga(dB) 0...
Description UHF Low Noise Amplifier Application

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    MT4S101T07 MT4S101T

Toshiba Semiconductor
Part No. MT4S101T07 MT4S101T
OCR Text ... Min 18 14.5 Typ. 23 17.0 0.8 Max 1.05 Unit GHz dB dB Electrical Characteristics (Ta = 25C) Characteristics Collector Cut-of...50 0.45 IE=0 f=1MHz Ta=25C Cob 2.0 1.8 1.6 Ga NF,Ga-IC 20 18 14 12 NF VCE=2V f=2GHz Ta=25C 1 10...
Description UHF Low Noise Amplifier Application

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    TA4020FT

Toshiba Semiconductor
Part No. TA4020FT
OCR Text ... = 3V, f = 2.6GHz Min 3.5 13 8.5 Typ. 5 15 10.5 0.95 1.25 -9.5 -4 Max 7 1.25 Unit mA dB dB dB dB dBmW dBmW Noise Fig...50 -60 -70 -80 -50 -45 -40 -35 -30 -25 -20 -15 -10 10 Circuit current ICC (mA) Supply voltage ...
Description UHF LOW NOISE AMPLIFIER APPLICATION

File Size 134.07K  /  4 Page

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