Part Number Hot Search : 
LV123 LV123 SF801 08226 ATM24 5KP30 MTE1300N N800209
Product Description
Full Text Search
  684mw Datasheet PDF File

For 684mw Found Datasheets File :: 4    Search Time::1.64ms    
Page :: | <1> |   

    GM71V65403A GM71VS65403AL

Hynix Semiconductor
Part No. GM71V65403A GM71VS65403AL
OCR Text ... *Power dissipation - Active : 684mw/612mW(MAX) - Standby : 1.8 mW ( CMOS level : MAX ) 0.54mW ( L-Version : MAX) *EDO page mode capability *Access time : 50ns/60ns (max) *Refresh cycles - RAS only Refresh 4096 cycles/64 A (GM71V65403A) 40...
Description (GM71VS65403AL / GM71V65403A) 16M x 4-Bit CMOS DRAM

File Size 285.17K  /  25 Page

View it Online

Download Datasheet





    HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
Part No. HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
OCR Text ...issipation 50ns Active Standby 684mw 60ns 612mW 70ns 540mW * Refresh cycle Part No HY51V18163HG HY51V18163HGL Ref 1K 1K Normal 16ms 128ms L-part 7.2mW(CMOS level Max) 0.83mW (L-version : Max) ORDERING INFORMATION Part Number ...
Description Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power

File Size 105.82K  /  12 Page

View it Online

Download Datasheet

    HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51V18163HGJ-7 HY51V18163HGT HY51V18163HGT-5 HY51V18163HGT-7

Hynix Semiconductor
Part No. HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51V18163HGJ-7 HY51V18163HGT HY51V18163HGT-5 HY51V18163HGT-7
OCR Text ...issipation 50ns Active Standby 684mw 60ns 612mW 70ns 540mW * Refresh cycle Part No HY51V18163HG HY51V18163HGL Ref 1K 1K Normal 16ms 128ms L-part 7.2mW(CMOS level Max) 0.83mW (L-version : Max) ORDERING INFORMATION Part Number ...
Description 1M x 16Bit EDO DRAM

File Size 86.25K  /  12 Page

View it Online

Download Datasheet

For 684mw Found Datasheets File :: 4    Search Time::1.64ms    
Page :: | <1> |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 684mw

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.3407289981842