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Macronix 旺宏
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Part No. |
MX23L3222 23L3222
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OCR Text |
32m-bit MASK ROM (16/32 BIT OUTPUT)
FEATURES
* Bit organization - 2M x 16 (word mode) - 1M x 32 (double word mode) * Fast access time - Random access: 100ns (max.) - Page access: 30ns (max.) * Page - 8 double words per page * Current - Op... |
Description |
32m-bit MASK ROM (16/32 BIT OUTPUT) From old datasheet system
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File Size |
44.84K /
6 Page |
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it Online |
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Macronix 旺宏
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Part No. |
MX29L3222 29L3222
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OCR Text |
32m-bit [2M x 16/1M x 32] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
* * * * * 3.3V 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns/120ns Fast pagemode access time: 30ns/50ns Page access depth:... |
Description |
32m-bit [2M x 16/1M x 32] CMOS From old datasheet system
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File Size |
192.79K /
35 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH64D64AKQH-75 MH64D64AKQH-10
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OCR Text |
...0
- Utilizes industry standard 32M X 8 DDR Synchronous DRAMs in Smal TSOP package , industry standard EEPROM(SPD) in TSSOP package - 200pin SO-DIMM - Vdd=Vddq=2.5v 0.2V
4,294,967,296-BIT (67,108,864-WORD BY 64-BIT) Double Data Rate Sync... |
Description |
4,294,967,296-BIT (67,108,864-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
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File Size |
359.29K /
40 Page |
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it Online |
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Samsung
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Part No. |
K9F1G08U0M
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OCR Text |
...K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300s on the 2112byte(X8 device) or 1056-word(X... |
Description |
IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC From old datasheet system
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File Size |
475.80K /
39 Page |
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it Online |
Download Datasheet |
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Price and Availability
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