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  31ns Datasheet PDF File

For 31ns Found Datasheets File :: 37    Search Time::1.062ms    
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    ADC-304 ADC-304-3

Datel
List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
Part No. ADC-304 ADC-304-3
OCR Text ...CK pulse after a brief delay of 31ns maximum (TDLH, TDHL). Refer to the Timing Diagram (Figure 3) for more information. 7. Connect all free pins to ANALOG GND to reduce unwanted noise. The analog input range is equal to a 2V spread. The vol...
Description From old datasheet system
8-Bit, 20MHz, Low-Power Flash A/D Converters 8位,20MHz的,低功耗闪存的A / D转换

File Size 150.62K  /  5 Page

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    FDS6676S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6676S
OCR Text ... TIME : 12.5ns/div typ tRR : 31ns typ IRM : 1.8A Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDS6676S SyncFET body diode reverse recovery characteristic. For comparison pur...
Description 30V N-Channel PowerTrench SyncFET
30V N-Channel PowerTrench? SyncFET

File Size 117.61K  /  6 Page

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    K4F640412D K4F660412D

SAMSUNG[Samsung semiconductor]
Part No. K4F640412D K4F660412D
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A10 (A0~A11)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products a...
Description 16M x 4bit CMOS Dynamic RAM with Fast Page Mode

File Size 366.75K  /  20 Page

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    K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A9 (A0~A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products an...
Description 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns

File Size 366.42K  /  20 Page

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    K4F640812D K4F660812D K4F640812D-JCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640812D K4F660812D K4F640812D-JCL
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A9 (A0~A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products an...
Description 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.

File Size 367.41K  /  20 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4F641612D K4F641612D-TI K4F641612D-TP K4F661612D-TP K4F661612D K4F661612D-TI
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and...
Description 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

File Size 380.96K  /  35 Page

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    K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-T

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

File Size 842.92K  /  35 Page

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    K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power

File Size 842.61K  /  35 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4F641612E K4F661612E
OCR Text ... tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and...
Description 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

File Size 376.99K  /  35 Page

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For 31ns Found Datasheets File :: 37    Search Time::1.062ms    
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