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  3-to-92 Datasheet PDF File

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...on for system voltages, such as 3.3V and 5V. 2 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7807V RDS(on) QG ...to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TA = 7...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make th...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...pical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE RATINGS IRF7809A VDS RDS(on) QG Qsw Qoss 30V 8.5 m 73 nC ...to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 25 Units C/W C/W TJ, TSTG IS ISM 2.5 50 TA = 25C...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...fective Output Capacitance Min. 3.7 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 11 23 26 19 1018 155 8.0 1490 4...to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanch...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...gh energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25C...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 148.64K  /  7 Page

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    IRF9240 IRF9240-SMD

TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
Part No. IRF9240 IRF9240-SMD
OCR Text 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) P-CHANNEL POWER MOSFET D 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) ...TO-3 Package Pin 1 - Gate Pin 2 - Source 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1...
Description CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOSFET

File Size 25.33K  /  2 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... Typ. --- 0.50 --- Max. 3.1 --- 62 Units C/W 5/13/98 IRF9520N Electrical Characteristics @ TJ = 25C (unless otherwise spe...to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530-220M

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF9530-220M
OCR Text 3.56 Dia. 3.81 10.41 10.67 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 ...TO-220 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS TO-220M - Metal Package Pad 1 - Gate Pad 2 - Dr...
Description P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 18.21K  /  2 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...0 seconds Max. -12 -8.5 -48 3.8 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-st...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... Typ. --- 0.50 --- Max. 3.3 --- 62 Units C/W 8/27/97 IRF9Z24N Electrical Characteristics @ TJ = 25C (unless otherwise spe...to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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