3-gf-7.62 pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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3-gf-7.62 Datasheet PDF File

For 3-gf-7.62 Found Datasheets File :: 7 Search Time::2.454ms
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					Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0910A 0910A
OCR Text	...@2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE * IG 10.0 RECOMM...GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:T...
Description	MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
File Size	25.38K / 3 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF0910A_1 MGF0910A MGF0910A1
OCR Text	...@2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE * IG 10.0 RECOMM...GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:T...
Description	L, S BAND POWER GaAs FET
File Size	176.99K / 4 Page	View it Online	Download Datasheet

					Mitsubishi Electric Semiconductor
Part No.	MGF0805A
OCR Text	...ce *1 Test conditions VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 mA VDS = 10 V, IDS = 400 mA VDS = 10 V, IDQ = 400 mA, f = 1.9 GHz, Pin = 22 dBm VDS=10V, IDQ=400mA, f=1.9GHz Vf Method Limits Min. - - 0.5 - 35.0 - 13.0 - Typ. 1800 - 1....
Description	L & S Band GaAs FET [ SMD non-matched ]
File Size	113.02K / 8 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRF6V14300HR3 MRF6V14300HSR3
OCR Text	...reescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per ...GF Drp H2 & H3 -- -- -- -- -- 10 0.5 0.3 - 20 - 65 -- -- -- -- -- dB dB dBc dBc All Spurs Below ...
Description	RF Power Field Effect Transistors
File Size	398.32K / 10 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRF6V14300HSR3 MRF6V14300HR3
OCR Text	3, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applicatio...GF Drp H2 & H3 -- -- -- -- -- 10 0.5 0.3 --20 --65 -- -- -- -- -- dB dB dBc dBc All Spurs Below ...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	633.54K / 10 Page	View it Online	Download Datasheet

					Mitsubishi Electric Semiconductor
Part No.	MGF0913A MGF0913A11
OCR Text	...oltage v ds =3v,i d =2.5ma -1 -3 -5 v gm transconductance v ds =3v,i d =300ma - 200 - ms po output power v ds =10v,i d =200ma,f=1.9ghz 29.5 31 - dbm ? add power added efficiency pin=18dbm - 48 - % g lp linear powe...
Description	High-power GaAs FET (small signal gain stage)
File Size	106.86K / 4 Page	View it Online	Download Datasheet

					Lite-On Technology Corporation
Part No.	MB140
OCR Text	... 1.80 0.95 0.42 0.70 -0.05 0.10 3.65 0.40 1.10 0.20 MAX. 2.05 2.20 1.25 0.68 1.00 +0.10 0.25 3.95 0.70 1.50 0.80 A B A K B J C D E F G H I C GF G I MECHANICAL DATA Case : JEDEC DO-216AA Molded plastic Polarity...
Description	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
File Size	33.58K / 2 Page	View it Online	Download Datasheet

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