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  26.973 Datasheet PDF File

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ...6 72.9 63.7 55.6 47.7 40.7 33.4 26.8 20.2 13.8 7.5 1.0 -4.6 -11.0 -16.7 -22.6 -28.3 -34.0 -39.7 -44.9 -50.7 -55.7 -61.4 -66.4 -71.7 MAG .033...973 .934 .913 .875 .851 .825 .802 .777 .752 .735 S21 ANG 161.4 144.3 129.7 116.5 104.7 92.7 82.1 71....
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    MRF15060 MRF15060S

MOTOROLA[Motorola, Inc]
Part No. MRF15060 MRF15060S
OCR Text ...ss AB amplifier applications in 26 volt amplitude modulated and multi-carrier base station equipment. * Guaranteed Two-Tone Performance at 1...973 0.974 0.976 0.977 0.978 0.980 0.982 0.985 S22 178 178 179 179 179 180 180 -180 -180 -180 -179 -...
Description RF POWER BIPOLAR TRANSISTORS

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    MRF15090

MOTOROLA[Motorola, Inc]
Part No. MRF15090
OCR Text 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equip...973 0.957 0.938 0.903 0.857 0.821 0.837 0.872 0.901 0.920 0.940 0.954 0.965 0.971 172 171 170 170 1...
Description RF POWER TRANSISTOR

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    AU2064 AU2064A AU1564 AU1564A

Aplus Intergrated Circuits
APLUS[Apuls Intergrated Circuits]
Aplus Integrated Circuits Inc.
Part No. AU2064 AU2064A AU1564 AU1564A
OCR Text ...4 24 SEG19 687.9 25 SEG20 832.4 26 SEG21 976.9 27 SEG22 1121.4 28 SEG23 1265.9 29 SEG24 1410.4 30 VDD 1554.9 31 COM3 1631.7 32 COM2 1631.7 3...973.5 -1126.5 -1279.5 -1432.5 -1603.4 -1631.7 -1631.7 -1631.7 -1631.7 -1631.7 Y -455.1 -302.1 -149.1...
Description single chip voice synthesizer with 4-bit microprocessor
MS3106A16S-1PY W/P CAP
MS3106A16S-1PW W/P CAP

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    SK100EL16TADT SK10EL16TADT SK10EL16TA-TD SK100EL16TA-TD SK100EL16TBD SK100EL16TBDT SK10EL16TBD SK10EL16TBDT SK10EL16TU S

Semtech Corporation
Part No. SK100EL16TADT SK10EL16TADT SK10EL16TA-TD SK100EL16TA-TD SK100EL16TBD SK100EL16TBDT SK10EL16TBD SK10EL16TBDT SK10EL16TU SK100EL16TDD SK100EL16TDDT SK100EL16TCD SK100EL16TCDT SK10EL16TDD SK10EL16TDDT SK10EL16TCDT SK10EL16TCD SK100EL16TU
OCR Text ...-1.32 5.5 TA = +25oC Min 14 26 26 26 -1.33 -1.33 -1.33 -1.33 3.0 Max 23 41 41 41 -1.29 -1.30 -1.29 -1.29 5.5 TA = +85oC Min 15 27 27...973 -974 -933 -1123 -1791 -1804 -1739 -1595 786 795 533 433 150 Max -953 -954 --915 -1097 -1759 -...
Description Differential Receiver

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    AT32032 AT-32032-BLK AT-32032-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT32032 AT-32032-BLK AT-32032-TR1
OCR Text ...Ang 137 119 104 79 60 30 7 -11 -26 -41 -56 -72 -87 dB -20.65 -18.39 -17.35 -16.68 -16.52 -14.42 -10.21 -6.58 -4.22 -2.85 -2.33 -2.28 -2.57 S...973 0.913 0.852 0.794 Ang 130 112 98 77 61 34 11 -8 -26 -42 -58 -74 -89 dB -23.72 -21.73 -20.58 -19....
Description AT32032

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    PTF10137

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10137
OCR Text ...Q = 160 mA f = 960 MHz 24 26 28 30 32 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs. Out...973 0.978 0.978 0.981 0.981 0.982 0.983 0.983 0.983 0.983 0.981 0.981 0.981 0.981 0.981 0.979 0.979 ...
Description 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor

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    PTF10138

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10138
OCR Text ... IDQ = 500 mA f = 960 MHz 24 26 28 30 32 10 0 1 100 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs...973 0.974 0.982 0.985 0.981 0.979 0.986 0.984 0.986 0.992 0.990 0.983 0.984 0.993 0.991 0.986 0.982 ...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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    PTF10139

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10139
OCR Text ... IDQ = 500 mA f = 960 MHz 24 26 28 30 32 10 0 1 100 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs...973 0.974 0.982 0.985 0.981 0.979 0.986 0.984 0.986 0.992 0.990 0.983 0.984 0.993 0.991 0.986 0.982 ...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦,860-960兆赫GOLDMOS场效应晶体管

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    2211-1500G 2211 2211-1000D 2211-1000G 2211-100A 2211-100B 2211-100D 2211-1200G 2211-120C 2211-150A 2211-150D 2211-2000G

Data Delay Devices, Inc.
ETC
Part No. 2211-1500G 2211 2211-1000D 2211-1000G 2211-100A 2211-100B 2211-100D 2211-1200G 2211-120C 2211-150A 2211-150D 2211-2000G 2211-200A 2211-200B 2211-200C 2211-200D 2211-200G 2211-250D 2211-300B 2211-300C 2211-300D 2211-300G 2211-400B 2211-400C 2211-400D 2211SERIES 2211-600C 2211-600D 2211-600G 2211-60A 2211-60B
OCR Text ....0 7.0 10.0 12.0 22.0 21.0 23.0 26.0 30.0 37.0 41.0 47.0 20.0 37.0 40.0 45.0 52.0 80.0 100 110 130 156 DASH NUMBER SPECIFICATIONS Part N...973-773-2299 Fax: 973-773-9672 http://www.datadelay.com 2 2211 PASSIVE DELAY LINE TEST SPEC...
Description Delay 1000
FIXEDDIPDELAYLINE
FIXED DIP DELAY LINE TD/TR = 10

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